BTA212X-600D NXP Semiconductors, BTA212X-600D Datasheet - Page 5

• Manufacturer Part Number: BTA212X-600D
• Description: Triacs 600V 12A
• Manufacturer: NXP Semiconductors

Specifications of BTA212X-600D

• Rated Repetitive Off-state Voltage Vdrm: 600 V
• Breakover Current Ibo Max: 105 A
• Off-state Leakage Current @ Vdrm Idrm: 0.5 mA
• Gate Trigger Voltage (vgt): 1.5 V
• Gate Trigger Current (igt): 5 mA
• Holding Current (ih Max): 15 mA
• Forward Voltage Drop: 1.6 V @ 17A
• Mounting Style: SMD/SMT
• Package / Case: SOT-186A
• Repetitive Peak Forward Blocking Voltage: 600 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BTA212X-600D,127

Philips Semiconductors
June 2003
Three quadrant triacs
guaranteed commutation
Fig.8. Normalised latching current I
Fig.9. Normalised holding current I
2.5
1.5
0.5
2.5
1.5
0.5
I
GT
3
2
1
0
2.5
1.5
0.5
3
2
1
0
-50
-50
3
2
1
0
(T
IL(25 C)
-50
IGT(25°C)
IL(Tj)
IGT(Tj)
IH(25C)
IH(Tj)
j
Fig.7. Normalised gate trigger current
)/ I
GT
versus junction temperature T
versus junction temperature T
(25˚C), versus junction temperature T
0
0
0
Tj/°C
Tj / C
50
Tj / C
50
50
100
100
100
H
L
(T
(T
j
j
)/ I
)/ I
j
j
T2+ G+
T2+ G-
T2- G-
.
.
H
L
(25˚C),
(25˚C),
150
150
150
j
.
5
10 3
10 2
10
Fig.10. Typical and maximum on-state characteristic.
1
Fig.11. Transient thermal impedance Z
20
dIcom/dt (A/ms)
0.001
40
30
20
10
commutating current dI
0.01
0
Fig.12. Minimum critical rate of change of
0.1
0
10
10us
IT / A
1
Rs = 0.0316 Ohms
Vo = 1.175 V
Tj = 125 C
Tj = 25 C
Zth j-hs (K/W)
with heatsink compound
without heatsink compound
40
temperature, dV
0.5
0.1ms
BTA212X series D, E and F
unidirectional
60
pulse width t
1ms
1
tp / s
VT / V
10ms
1.5
com
80
com
typ
/dt = 10 V/ s.
/dt versus junction
bidirectional
P
D
p
.
0.1s
Product specification
2
t p
100
max
2.5
1s
th j-hs
t
120
, versus
Rev 3.000
F TYPE
E TYPE
D TYPE
10s
T j (˚C)
3
140