2N6507T ON Semiconductor, 2N6507T Datasheet - Page 4

• Manufacturer Part Number: 2N6507T
• Description: SCRs 400V 25A
• Manufacturer: ON Semiconductor

Specifications of 2N6507T

• Breakover Current Ibo Max: 250 A
• Rated Repetitive Off-state Voltage Vdrm: 400 V
• Off-state Leakage Current @ Vdrm Idrm: 0.01 mA
• Forward Voltage Drop: 1.8 V
• Gate Trigger Voltage (vgt): 1.5 V
• Gate Trigger Current (igt): 30 mA
• Holding Current (ih Max): 40 mA
• Mounting Style: Through Hole
• Package / Case: TO-220-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

0.07
0.05
0.03
0.02
0.01
1.0
0.7
0.5
0.3
0.2
0.1
100
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
70
50
30
20
10
0.1
0
Figure 3. Typical On-State Characteristics
0.2 0.3
0.4
v
F
, INSTANTANEOUS VOLTAGE (VOLTS)
0.8
0.5
125 C
1.2
1.0
25 C
2.0
1.6
3.0
2.0
5.0
Figure 5. Thermal Response
2.4
10
http://onsemi.com
2N6504 Series
2.8
20
t, TIME (ms)
4
30
300
275
250
225
200
175
50
1.0
Figure 4. Maximum Non-Repetitive Surge Current
SURGE IS PRECEDED AND
FOLLOWED BY RATED CURRENT
100
T
C
f = 60 Hz
Z
qJC(t)
= 85 C
200 300
= R
2.0
qJC
NUMBER OF CYCLES
500
r(t)
3.0
1.0 k
4.0
2.0 k
1 CYCLE
3.0 k 5.0 k
6.0
8.0
10 k
10