2N6507T ON Semiconductor, 2N6507T Datasheet - Page 5

• Manufacturer Part Number: 2N6507T
• Description: SCRs 400V 25A
• Manufacturer: ON Semiconductor

Specifications of 2N6507T

• Breakover Current Ibo Max: 250 A
• Rated Repetitive Off-state Voltage Vdrm: 400 V
• Off-state Leakage Current @ Vdrm Idrm: 0.01 mA
• Forward Voltage Drop: 1.8 V
• Gate Trigger Voltage (vgt): 1.5 V
• Gate Trigger Current (igt): 30 mA
• Holding Current (ih Max): 40 mA
• Mounting Style: Through Hole
• Package / Case: TO-220-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

100
10
1
-40
-25
Figure 6. Typical Gate Trigger Current
-10
versus Junction Temperature
T
J
5
, JUNCTION TEMPERATURE ( C)
20
35
100
50
10
1
-40
65
TYPICAL TRIGGER CHARACTERISTICS
-25
80
-10
Figure 8. Typical Holding Current
versus Junction Temperature
95
T
J
5
http://onsemi.com
, JUNCTION TEMPERATURE ( C)
2N6504 Series
110
20
125
35
5
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
50
-40
65
-25
Figure 7. Typical Gate Trigger Voltage
80
-10
versus Junction Temperature
95
T
J
5
, JUNCTION TEMPERATURE ( C)
110
20
125
35
50
65
80
95
110
125