TGF4118 TriQuint, TGF4118 Datasheet - Page 5

• Manufacturer Part Number: TGF4118
• Description: RF GaAs DC-6.0GHz 7 Watt HFET
• Manufacturer: TriQuint

Specifications of TGF4118

• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 1004415

TriQuint Semiconductor Texas Phone: [phone]
Absolute Maximum Ratings
Drain-to-source Voltage, Vds..............................…………………………………………..........12 V
Gate-to-source Voltage, Vgs..................………………………………………….............-5 V to 0 V
Mounting Temperature.................……………………………………….….........………………320°C
Storage Temperature.....................…………………………………….….............… -65°C to 200°C
Power Dissipation...........…………….………………………………………..refer to Thermal Model
Operating Channel Temperature………………………………………….….refer to Thermal Model
Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device.
These are stress ratings only, and functional operation of the device at these or any other conditions beyond
those indicated in this document is not implied. Exposure to absolute maximum rated conditions for extended
periods of time may affect device reliability.
IDSS
GM
VP
BVGS
BVGD
4 5 0 0
4 0 0 0
3 5 0 0
3 0 0 0
2 5 0 0
2 0 0 0
1 5 0 0
1 0 0 0
5 0 0
DC Characteristics for the TGF4118-EPU
0
0
DC probe Parameters
Drain Saturation Current
Transconductance
Pinch Off Voltage
Breakdown Voltage Gate-Source
Breakdown Voltage Gate-Drain
Vg = 0.0 V to -2.75 V in 0.25 steps T
1
2
Example of DC I-V Curves
3
D r a in V o lt a g e ( V )
Fax [phone]
4
5
6
A
Nominal
= 25°C
-1.85
4410
2970
-22
-22
7
Web: www.triquint.com
8
Unit
mA
mS
V
V
V
9
5