NE5511279A NEC, NE5511279A Datasheet - Page 2

• Manufacturer Part Number: NE5511279A
• Description: RF MOSFET Small Signal RO 551-NE5511279A-A
• Manufacturer: NEC

Specifications of NE5511279A

• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: 6 V
• Continuous Drain Current: 3 A
• Power Dissipation: 20 W
• Mounting Style: SMD/SMT
• Forward Transconductance Gfs (max / Min): 0.0023 S
• Package / Case: 79A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Note:
P.C.B. LAYOUT
Note:
1. Operation in excess of any one of these parameters may result
2. V
TYPICAL PERFORMANCE CURVES
ABSOLUTE MAXIMUM RATINGS
SYMBOLS
Use rosin or other material to prevent solder from penetrating
through-holes.
in permanent damage.
P
T
V
V
T
DS
STG
I
TOT
GS
CH
DS
D
45
40
35
30
25
20
must be used under 12 V on RF operation.
10
OUTPUT POWER, DRAIN CURRENT,
f = 900 MHz
Gate
Drain Supply Voltage
Gate Supply Voltage
Drain Current
Total Power Dissipation
Channel Temperature
Storage Temperature
15
η
d
Input Power,P
PARAMETERS
, η
add
0.5
(Units in mm)
20
vs. INPUT POWER
79A PACKAGE
4.0
1.7
6.1
in
25
0.5
(dBm)
2
Source
Through hole φ 0.2 × 33
30
Drain
UNITS
η
P
I
η
DS
add
out
d
°C
°C
W
V
V
A
35
5
4
3
2
1
0
1
(T
-55 to +125
RATINGS
A
20.0
= 25 °C)
125
(T
100
75
50
25
0
6.0
3.0
20
A
= 25°C)
ORDERING INFORMATION
RECOMMENDED OPERATING LIMITS
SYMBOLS
NE5511279A-T1-A
NE5511279A-T1A-A
PART NUMBER
V
V
P
I
DS
DS
GS
IN
45
40
35
30
25
20
10
OUTPUT POWER, DRAIN CURRENT,
f = 460 MHz
Drain to Source Voltage
Gate Supply Voltage
Drain Current
Input Power
f = 900 MHz, V
PARAMETERS
15
η
d
Input Power,P
, η
add
• 12 mm wide embossed taping.
• Gate pin faces the perforation side of
• 1 Kpcs/Reel
20
the tape.
vs. INPUT POWER
1
DS
= 7.5 V
25
in
(dBm)
UNITS
dBm
30
QTY
V
V
A
η
P
I
DS
η
add
out
d
35
TYP
7.5
2.0
2.5
5
4
3
2
1
0
27
100
75
50
25
0
MAX
3.0
3.0
8.0
30