BLF6G38-10 /T3 NXP Semiconductors, BLF6G38-10 /T3 Datasheet - Page 6

• Manufacturer Part Number: BLF6G38-10 /T3
• Description: RF MOSFET Small Signal LDMOS TNS
• Manufacturer: NXP Semiconductors

Specifications of BLF6G38-10 /T3

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.256 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Continuous Drain Current: 3.1 A
• Maximum Operating Temperature: + 200 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: CDFM
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 2W(Typ)
• Power Gain (typ)@vds: 14@28VdB
• Frequency (min): 3.4GHz
• Frequency (max): 3.6GHz
• Package Type: CDFM
• Pin Count: 3
• Forward Transconductance (typ): 0.8(Min)S
• Drain Source Resistance (max): 1256@6.15Vmohm
• Reverse Capacitance (typ): 3.6@28VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 20%
• Mounting: Surface Mount
• Mode Of Operation: 1-Carrier N-CDMA
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF6G38-10,118

NXP Semiconductors
BLF6G38-10_BLF6G38-10G_1
Product data sheet
Fig 4.
Fig 6.
(dB)
(dB)
G
G
p
p
20
18
16
14
12
10
20
18
16
14
12
10
3400
10
V
PAR = 9.7 dB at 0.01 % probability.
Power gain and drain efficiency as function of
frequency; typical values
V
single carrier IS-95; PAR = 9.7 dB at 0.01 % probability;
channel bandwidth = 1.23 MHz.
Power gain and drain efficiency as function of
load power; typical values
DS
DS
1
= 28 V; I
= 28 V; I
7.3.1 Graphs
7.3 Single carrier NA IS-95 broadband performance at 2 W average
3450
G
D
p
Dq
Dq
= 130 mA; Single Carrier IS-95;
= 130 mA; f = 3500 MHz;
3500
1
P
L(AV)
3550
(W)
f (MHz)
001aaj365
001aaj367
G
D
p
3600
Rev. 01 — 3 February 2009
10
23
22
21
20
19
18
50
40
30
20
10
0
(%)
(%)
D
D
BLF6G38-10; BLF6G38-10G
Fig 5.
Fig 7.
ACPR
ACPR
(dBc)
(dBc)
(1) Low frequency component
(2) High frequency component
(1) Low frequency component
(2) High frequency component
40
50
60
70
35
45
55
65
75
3400
10
V
PAR = 9.7 dB at 0.01 % probability.
Adjacent channel power ratio as a function of
frequency; typical values
V
single carrier IS-95; PAR = 9.7 dB at 0.01 % probability;
channel bandwidth = 1.23 MHz; IBW = 30 kHz.
Adjacent channel power ratio as a function of
load power; typical values
ACPR
ACPR
ACPR
ACPR
ACPR
ACPR
DS
1
DS
= 28 V; I
= 28 V; I
855k
1500k
1980k
885k
1500k
1980k
3440
Dq
Dq
WiMAX power LDMOS transistor
= 130 mA; single carrier IS-95;
= 130 mA; f = 3500 MHz;
3480
1
(2)
(1)
(1)
(2)
(2)
(1)
(1)
(2)
(2)
(1)
3520
P
L(AV)
(1)
(2)
3560
© NXP B.V. 2009. All rights reserved.
(W)
001aaj366
001aaj368
f (MHz)
3600
10
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