BLF6G38-10 /T3 NXP Semiconductors, BLF6G38-10 /T3 Datasheet - Page 8

• Manufacturer Part Number: BLF6G38-10 /T3
• Description: RF MOSFET Small Signal LDMOS TNS
• Manufacturer: NXP Semiconductors

Specifications of BLF6G38-10 /T3

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.256 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Continuous Drain Current: 3.1 A
• Maximum Operating Temperature: + 200 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: CDFM
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 2W(Typ)
• Power Gain (typ)@vds: 14@28VdB
• Frequency (min): 3.4GHz
• Frequency (max): 3.6GHz
• Package Type: CDFM
• Pin Count: 3
• Forward Transconductance (typ): 0.8(Min)S
• Drain Source Resistance (max): 1256@6.15Vmohm
• Reverse Capacitance (typ): 3.6@28VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 20%
• Mounting: Surface Mount
• Mode Of Operation: 1-Carrier N-CDMA
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF6G38-10,118

NXP Semiconductors
8. Test information
BLF6G38-10_BLF6G38-10G_1
Product data sheet
Fig 10. Component layout for 3400 MHz to 3600 MHz test circuit BLF6G38-10
Striplines are on a double copper-clad Taconic RF35 Printed-Circuit Board (PCB) with
thickness = 0.76 mm.
See
Table 9
C1
BLF6G38-10
Input Rev 2
NXP
for list of components.
Rev. 01 — 3 February 2009
C2
BLF6G38-10; BLF6G38-10G
PCB1
R1
C3
C4
WiMAX power LDMOS transistor
BLF6G38-10
Output Rev 3
NXP
C5
L1
© NXP B.V. 2009. All rights reserved.
R2
001aaj371
C6
PCB2
C7
r
= 3.5 and
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