BAS40-04,235 NXP Semiconductors, BAS40-04,235 Datasheet - Page 8

• Manufacturer Part Number: BAS40-04,235
• Description: DIODE SCHOTTKY 40V 120MA SOT-23
• Manufacturer: NXP Semiconductors

Specifications of BAS40-04,235

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Voltage - Forward (vf) (max) @ If: 1V @ 40mA
• Current - Reverse Leakage @ Vr: 10µA @ 40V
• Current - Average Rectified (io) (per Diode): 120mA (DC)
• Voltage - Dc Reverse (vr) (max): 40V
• Diode Type: Schottky
• Speed: Small Signal =< 200mA (Io), Any Speed
• Diode Configuration: 1 Pair Series Connection
• Mounting Type: Surface Mount
• Product: Schottky Diodes
• Peak Reverse Voltage: 40 V
• Forward Continuous Current: 0.12 A
• Max Surge Current: 0.2 A
• Configuration: Dual Series
• Forward Voltage Drop: 1 V @ 0.04 A
• Maximum Reverse Leakage Current: 10 uA
• Operating Temperature Range: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 933661850235; BAS40-04 /T3; BAS40-04 /T3

NXP Semiconductors
BAS40_1PSXXSB4X_SER_8
Product data sheet
Fig 1.
Fig 3.
(mA)
(1) T
(2) T
(3) T
(4) T
10
10
I
(Ω)
r
F
10
10
10
dif
10
10
−1
−2
1
1
10
2
3
2
0
Forward current as a function of forward
voltage; typical values
f = 10 kHz
Differential resistance as a function of forward
current; typical values
−1
amb
amb
amb
amb
= 125 °C
= 85 °C
= 25 °C
= −40 °C
(1) (2)
0.2
1
(3)
0.4
(4)
0.6
10
I
0.8
F
(mA)
V
BAS40 series; 1PSxxSB4x series
mlc364
mlc361
F
(V)
Rev. 08 — 13 January 2010
10
1
2
Fig 2.
Fig 4.
(μA)
I
(1) T
(2) T
(3) T
10
10
(pF)
R
C
10
10
10
d
−1
−2
1
5
4
3
2
1
0
3
2
0
0
Reverse current as a function of reverse
voltage; typical values
T
Diode capacitance as a function of reverse
voltage; typical values
amb
amb
amb
amb
= 125 °C
= 85 °C
= 25 °C
= 25 °C; f = 1 MHz
10
10
General-purpose Schottky diodes
20
20
(1)
(2)
(3)
30
30
© NXP B.V. 2010. All rights reserved.
V R (V)
V R (V)
mlc362
mlc363
40
40
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