BAS40-06W,115 NXP Semiconductors, BAS40-06W,115 Datasheet - Page 2

• Manufacturer Part Number: BAS40-06W,115
• Description: DIODE SCHOTTKY 40V 120MA SOT-323
• Manufacturer: NXP Semiconductors

Specifications of BAS40-06W,115

• Package / Case: SC-70-3, SOT-323-3
• Mounting Type: Surface Mount
• Speed: Small Signal =< 200mA (Io), Any Speed
• Current - Reverse Leakage @ Vr: 10µA @ 40V
• Voltage - Forward (vf) (max) @ If: 1V @ 40mA
• Voltage - Dc Reverse (vr) (max): 40V
• Current - Average Rectified (io) (per Diode): 120mA (DC)
• Diode Configuration: 1 Pair Common Anode
• Product: Schottky Diodes
• Peak Reverse Voltage: 40 V
• Forward Continuous Current: 120 mA
• Max Surge Current: 0.2 A
• Configuration: Dual Common Anode
• Forward Voltage Drop: 380 mV
• Maximum Reverse Leakage Current: 10 uA
• Operating Temperature Range: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934044310115::BAS40-06W T/R::BAS40-06W T/R

NXP Semiconductors
2. Pinning information
BAS40_1PSXXSB4X_SER_8
Product data sheet
1.2 Features
1.3 Applications
1.4 Quick reference data
Table 2.
[1]
Table 3.
Symbol
Per diode
I
V
V
Pin
BAS40H; 1PS76SB40; 1PS79SB40
1
2
BAS40L
1
2
BAS40; BAS40W; 1PS70SB40
1
2
3
F
F
R
High switching speed
High breakdown voltage
Ultra high-speed switching
Pulse test: t
Quick reference data
Pinning
Parameter
forward current
forward voltage
reverse voltage
p
Description
cathode
anode
cathode
anode
anode
not connected
cathode
≤ 300 μs; δ ≤ 0.02.
BAS40 series; 1PSxxSB4x series
Rev. 08 — 13 January 2010
Conditions
I
F
= 1 mA
[1]
[1]
Low leakage current
Low capacitance
Voltage clamping
Simplified outline
1
General-purpose Schottky diodes
1
Transparent
1
[1]
top view
001aab540
Min
-
-
-
3
006aaa144
2
2
2
Typ
-
-
-
Symbol
© NXP B.V. 2010. All rights reserved.
1
Max
120
380
40
1
1
sym001
sym001
3
006aaa436
2
2
Unit
mA
mV
V
2 of 21
n.c.
2