BAT54CLT1G ON Semiconductor, BAT54CLT1G Datasheet - Page 22

• Manufacturer Part Number: BAT54CLT1G
• Description: DIODE SCHOTTKY DUAL 30V CC SOT23
• Manufacturer: ON Semiconductor

Specifications of BAT54CLT1G

• Voltage - Forward (vf) (max) @ If: 800mV @ 100mA
• Current - Reverse Leakage @ Vr: 2µA @ 25V
• Current - Average Rectified (io) (per Diode): 200mA (DC)
• Voltage - Dc Reverse (vr) (max): 30V
• Reverse Recovery Time (trr): 5ns
• Diode Type: Schottky
• Speed: Small Signal =< 200mA (Io), Any Speed
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Product: Schottky Diodes
• Peak Reverse Voltage: 30 V
• Forward Continuous Current: 0.2 A
• Max Surge Current: 0.6 A
• Configuration: Dual Common Cathode
• Recovery Time: 5 ns
• Forward Voltage Drop: 0.8 V @ 0.1 A
• Maximum Reverse Leakage Current: 2 uA
• Maximum Power Dissipation: 225 mW
• Operating Temperature Range: - 55 C to + 125 C
• Mounting Style: SMD/SMT
• Capacitance, Junction: 7.6 pF
• Current, Forward: 200 mA
• Package Type: SOT-23 (TO-236)
• Power Dissipation: 225 mW
• Primary Type: Schottky Barrier
• Speed, Switching: Fast
• Temperature, Junction, Maximum: +125 °C
• Temperature, Operating: -55 to +125 °C
• Time, Recovery: 5 ns
• Voltage, Forward: 0.52 V
• Voltage, Reverse: 30 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BAT54CLT1GOSTR

Final Product/Process Change Notification #16266
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MUN5235DW1T1G
MUN5237DW1T1G
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MUN5311DW1T1G
MUN5311DW1T2G
MUN5312DW1T1G
MUN5313DW1T1G
MUN5314DW1T1
MUN5314DW1T1G
MUN5315DW1T1G
MUN5316DW1T1G
MUN5330DW1T1
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MUN5333DW1T1G
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Issue Date: 08 Jun 2009
Rev.14 Jun 2007
Page 22 of 36