BAT54CLT1G ON Semiconductor, BAT54CLT1G Datasheet - Page 4

• Manufacturer Part Number: BAT54CLT1G
• Description: DIODE SCHOTTKY DUAL 30V CC SOT23
• Manufacturer: ON Semiconductor

Specifications of BAT54CLT1G

• Voltage - Forward (vf) (max) @ If: 800mV @ 100mA
• Current - Reverse Leakage @ Vr: 2µA @ 25V
• Current - Average Rectified (io) (per Diode): 200mA (DC)
• Voltage - Dc Reverse (vr) (max): 30V
• Reverse Recovery Time (trr): 5ns
• Diode Type: Schottky
• Speed: Small Signal =< 200mA (Io), Any Speed
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Product: Schottky Diodes
• Peak Reverse Voltage: 30 V
• Forward Continuous Current: 0.2 A
• Max Surge Current: 0.6 A
• Configuration: Dual Common Cathode
• Recovery Time: 5 ns
• Forward Voltage Drop: 0.8 V @ 0.1 A
• Maximum Reverse Leakage Current: 2 uA
• Maximum Power Dissipation: 225 mW
• Operating Temperature Range: - 55 C to + 125 C
• Mounting Style: SMD/SMT
• Capacitance, Junction: 7.6 pF
• Current, Forward: 200 mA
• Package Type: SOT-23 (TO-236)
• Power Dissipation: 225 mW
• Primary Type: Schottky Barrier
• Speed, Switching: Fast
• Temperature, Junction, Maximum: +125 °C
• Temperature, Operating: -55 to +125 °C
• Time, Recovery: 5 ns
• Voltage, Forward: 0.52 V
• Voltage, Reverse: 30 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BAT54CLT1GOSTR

Final Product/Process Change Notification #16266
BAT54T1G
Test:
HTRB
Precondition
Autoclave+PC Ta=121C RH=100% ~15 psig
H3TRB+PC
IOL+PC
TC+PC Ta= -65 C to 150 C
HTSL
DPA Per AECQ101, after 1000 cyc TC
DPA Per AECQ101, after 1008 hrs H3TRB
RSH
MMSZ5254ET1G
Test:
HTRB
Precondition
Autoclave+PC Ta=121C RH=100% ~15 psig
HAST+PC
IOL+PC
TC+PC Ta= -65 C to 150 C
HTSL
DPA Per AECQ101, after 1000 cyc TC
DPA Per AECQ101, after 1008 hrs HAST
RSH
MMSZ5265BT1G
Test:
HTRB
Precondition
Autoclave+PC Ta=121C RH=100% ~15 psig
HAST+PC
IOL+PC
TC+PC Ta= -65 C to 150 C
HTSL
DPA Per AECQ101, after 1000 cyc TC
DPA Per AECQ101, after 1008 hrs HAST
RSH
Issue Date: 08 Jun 2009
Ta=130C RH=85% p=~18.8psig
Ta=130C RH=85% p=~18.8psig
Ta=85C RH=85%
bias=80% rated V or100V Max
bias=80% rated V or100V Max
bias=80% rated V or100V Max
TA=150C,80% Rated Voltage
MSL1@ 260C , 3 X IR at 260 C/260 C
Ta=25C, Delta TJ = 100 C,
Ton/off = 2 min.
Ta=150C
Ta=260C, 10 sec dwell
TA=150C,80% Rated Voltage
MSL1@ 260C , 3 X IR at 260 C/260 C
Ta=25C, Delta TJ = 100 C,
Ton/off = 2 min.
Ta=150C
Ta=260C, 10 sec dwell
TA=150C,80% Rated Voltage
MSL1@ 260C , 3 X IR at 260 C/260 C
Ta=25C, Delta TJ = 100 C,
Ton/off = 2 min.
Ta=150C
Ta=260C, 10 sec dwell
Conditions:
Conditions:
Conditions:
Rev.14 Jun 2007
Interval:
Interval:
Interval:
15000 cyc
15000 cyc
15000 cyc
1008 hrs
1008 hrs
1000 cyc
1000 cyc
1008 hrs
1008 hrs
1000 cyc
1008 hrs
1008 hrs
1008 hrs
96 hrs
96 hrs
96 hrs
96 hrs
96 hrs
Results
0/240
0/960
0/240
0/240
0/240
0/240
0/240
0/6
Results
0/80
0/320
0/80
0/80
0/80
0/80
0/80
0/2
Results
0/160
0/640
0/160
0/160
0/160
0/160
0/160
0/4
0/6
0/90
0/2
0/30
0/4
0/60
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