US1M-E3/61T Vishay, US1M-E3/61T Datasheet
US1M-E3/61T
Specifications of US1M-E3/61T
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US1M-E3/61T Summary of contents
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... 100 RRM V 35 RMS V 50 100 DC = 110 ° F(AV) I FSM STG US1A thru US1M Vishay General Semiconductor US1D US1G US1J US1K US1M 200 400 600 800 1000 70 140 280 420 560 200 400 600 800 1000 1 150 www.vishay.com UNIT UM V 700 ...
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... US1A thru US1M Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T PARAMETER TEST CONDITIONS Maximum instantaneous at 1.0 A (1) forward voltage Maximum DC reverse current °C A rated DC blocking voltage T = 100 ° 0 Maximum reverse recovery time Typical junction capacitance at 4 MHz Note: (1) Pulse test: 300 µs pulse width duty cycle ...
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... T = 125 ° 100 ° US1J-US1M ° Percent of Rated Peak Reverse Voltage (%) ° 1.0 MHz mVp-p US1A - US1G sig US1J - US1M 1 0 Reverse Voltage (V) Figure 7. Typical Junction Capacitance 1 0.01 0 Pulse Duration (s) Figure 8. Typical Transient Thermal Impedance www.vishay.com 100 100 100 3 ...
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... US1A thru US1M Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) 0.065 (1.65) 0.049 (1.25) 0.090 (2.29) 0.078 (1.98) 0.060 (1.52) 0.030 (0.76) www.vishay.com 4 DO-214AC (SMA) Cathode Band 0.066 MIN. (1.68 MIN.) 0.110 (2.79) 0.100 (2.54) 0.177 (4.50) 0.157 (3.99) 0.060 MIN. ...
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... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...