1N5062GP-E3/54 Vishay, 1N5062GP-E3/54 Datasheet - Page 2

DIODE GPP AVAL 800V STD SOD-57

1N5062GP-E3/54

Manufacturer Part Number
1N5062GP-E3/54
Description
DIODE GPP AVAL 800V STD SOD-57
Manufacturer
Vishay
Datasheets

Specifications of 1N5062GP-E3/54

Diode Type
Avalanche
Voltage - Forward (vf) (max) @ If
1.2V @ 1A
Voltage - Dc Reverse (vr) (max)
800V
Current - Average Rectified (io)
1A
Current - Reverse Leakage @ Vr
5µA @ 800V
Speed
Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr)
2µs
Mounting Type
Through Hole
Package / Case
SOD-57, Axial
Repetitive Reverse Voltage Vrrm Max
800V
Forward Current If(av)
2A
Forward Voltage Vf Max
1.15V
Reverse Recovery Time Trr Max
4µs
Forward Surge Current Ifsm Max
50A
Product
Standard Recovery Rectifier
Configuration
Single
Reverse Voltage
800 V
Forward Voltage Drop
1.2 V
Recovery Time
2000 ns
Forward Continuous Current
1 A
Max Surge Current
50 A
Reverse Current Ir
5 uA
Mounting Style
Through Hole
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Capacitance @ Vr, F
-
Lead Free Status / Rohs Status
 Details

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
1N5062GP-E3/54
Manufacturer:
CYPRESS
Quantity:
22
1N5059GP thru 1N5062GP
Vishay General Semiconductor
Note
(1)
Note
(1)
Note
(1)
RATINGS AND CHARACTERISTICS CURVES
(T
www.vishay.com
2
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
ELECTRICAL CHARACTERISTICS (T
PARAMETER
Max. instantaneous forward voltage
Maximum DC reverse current at rated
DC blocking voltage
Typical reverse recovery time
Typical junction capacitance
THERMAL CHARACTERISTICS (T
PARAMETER
Typical thermal resistance
ORDERING INFORMATION (Example)
PREFERRED P/N
1N5061GP-E3/54
1N5061GP-E3/73
1N5061GPHE3/54
1N5061GPHE3/73
A
JEDEC registered values
Thermal resistance from junction to ambient at 0.375" (9.5 mm) lead length, P.C.B. mounted
AEC-Q101 qualified
= 25 °C unless otherwise noted)
1.0
0.8
0.6
0.4
0.2
0
25
0.375" (9.5 mm) Lead Length
Resistive or Inductive Load
Fig. 1 - Forward Current Derating Curve
50
(1)
(1)
60 Hz
Ambient Temperature (°C)
75
UNIT WEIGHT (g)
100
DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
For technical questions within your region, please contact one of the following:
0.425
0.425
0.425
0.425
125
150
1.0 A
I
I
4.0 V, 1 MHz
TEST CONDITIONS
F
rr
= 0.5 A, I
= 0.25 A
This datasheet is subject to change without notice.
175
PREFERRED PACKAGE CODE
A
= 25 °C unless otherwise noted)
A
T
T
T
A
A
A
200
R
= 25 °C unless otherwise noted)
= 75 °C
= 25 °C
= 175 °C
= 1.0 A,
54
73
54
73
SYMBOL 1N5059GP 1N5060GP 1N5061GP 1N5062GP
SYMBOL 1N5059GP 1N5060GP 1N5061GP 1N5062GP
R
R
V
I
JA
JL
R
C
F
t
rr
(1)
J
(1)
(1)
(1)
Fig. 2 - Maximum Non-repetitive Peak Forward Surge Current
50
40
30
20
10
0
BASE QUANTITY
1
DiodesEurope@vishay.com
4000
2000
4000
2000
Number of Cycles at 60 Hz
300
1.2
5.0
2.0
15
45
20
8.3 ms Single Half Sine-Wave
13" diameter paper tape and reel
13" diameter paper tape and reel
10
Ammo pack packaging
Ammo pack packaging
(JEDEC Method)
www.vishay.com/doc?91000
T
DELIVERY MODE
A
Document Number: 88513
= 100 °C
Revision: 15-Mar-11
100
UNIT
UNIT
°C/W
μA
μs
pF
V

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