BAS29,215 NXP Semiconductors, BAS29,215 Datasheet - Page 7

• Manufacturer Part Number: BAS29,215
• Description: DIODE SW 110V 250MA SOT-23
• Manufacturer: NXP Semiconductors

Specifications of BAS29,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Mounting Type: Surface Mount
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50ns
• Current - Reverse Leakage @ Vr: 100nA @ 90V
• Voltage - Forward (vf) (max) @ If: 1V @ 200mA
• Voltage - Dc Reverse (vr) (max): 90V
• Capacitance @ Vr, F: 35pF @ 0V, 1MHz
• Current - Average Rectified (io): 250mA (DC)
• Product: General Purpose Diodes
• Peak Reverse Voltage: 110 V
• Forward Continuous Current: 0.25 A
• Max Surge Current: 10 A
• Configuration: Single
• Recovery Time: 50 ns
• Forward Voltage Drop: 1.25 V
• Maximum Reverse Leakage Current: 0.1 uA
• Operating Temperature Range: + 150 C
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 933723180215::BAS29 T/R::BAS29 T/R

NXP Semiconductors
PACKAGE OUTLINE
2003 Mar 20
Plastic surface mounted package; 3 leads
General purpose controlled avalanche
(double) diodes
DIMENSIONS (mm are the original dimensions)
UNIT
mm
OUTLINE
VERSION
SOT23
1.1
0.9
A
max.
A
0.1
1
1
0.48
0.38
b
p
IEC
e 1
0.15
0.09
c
D
e
3.0
2.8
D
b p
3
TO-236AB
JEDEC
1.4
1.2
E
REFERENCES
0
2
1.9
e
w
B
0.95
M
e
1
scale
B
EIAJ
1
7
2.5
2.1
H
E
0.45
0.15
L
A
p
2 mm
A 1
0.55
0.45
Q
H E
0.2
E
BAS29; BAS31; BAS35
v
detail X
PROJECTION
0.1
EUROPEAN
w
L p
A
Q
c
Product data sheet
X
v
ISSUE DATE
M
97-02-28
99-09-13
A
SOT23