BAT54LT1G ON Semiconductor, BAT54LT1G Datasheet - Page 23

DIODE SCHOTTKY 30V DET/SW SOT23

BAT54LT1G

Manufacturer Part Number
BAT54LT1G
Description
DIODE SCHOTTKY 30V DET/SW SOT23
Manufacturer
ON Semiconductor
Datasheets

Specifications of BAT54LT1G

Voltage - Forward (vf) (max) @ If
800mV @ 100mA
Voltage - Dc Reverse (vr) (max)
30V
Current - Average Rectified (io)
200mA (DC)
Current - Reverse Leakage @ Vr
2µA @ 25V
Diode Type
Schottky
Speed
Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr)
5ns
Capacitance @ Vr, F
10pF @ 1V, 1MHz
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Rectifier Type
Schottky Diode
Configuration
Single
Peak Rep Rev Volt
30V
Avg. Forward Curr (max)
0.2
Rev Curr
2uA
Peak Non-repetitive Surge Current (max)
0.6A
Forward Voltage
0.8V
Operating Temp Range
-55C to 125C
Package Type
SOT-23
Rev Recov Time
5ns
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Product
Schottky Diodes
Peak Reverse Voltage
30 V
Forward Continuous Current
0.2 A
Max Surge Current
0.6 A
Recovery Time
5 ns
Forward Voltage Drop
0.8 V @ 0.1 A
Maximum Reverse Leakage Current
2 uA
Operating Temperature Range
- 55 C to + 125 C
Mounting Style
SMD/SMT
Capacitance, Junction
7.6 pF
Current, Forward
200 mA
Power Dissipation
200 mW
Primary Type
Schottky Barrier
Speed, Switching
Fast
Temperature, Junction, Maximum
+125 °C
Temperature, Operating
-55 to +125 °C
Time, Recovery
5 ns
Voltage, Forward
0.52 V
Voltage, Reverse
30 V
Dc
0546
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BAT54LT1GOSTR

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Issue Date: 08 Jun 2009
Rev.14 Jun 2007
Page 23 of 36

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