BAT54LT1G ON Semiconductor, BAT54LT1G Datasheet - Page 8

• Manufacturer Part Number: BAT54LT1G
• Description: DIODE SCHOTTKY 30V DET/SW SOT23
• Manufacturer: ON Semiconductor

Specifications of BAT54LT1G

• Voltage - Forward (vf) (max) @ If: 800mV @ 100mA
• Voltage - Dc Reverse (vr) (max): 30V
• Current - Average Rectified (io): 200mA (DC)
• Current - Reverse Leakage @ Vr: 2µA @ 25V
• Diode Type: Schottky
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 5ns
• Capacitance @ Vr, F: 10pF @ 1V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Rectifier Type: Schottky Diode
• Configuration: Single
• Peak Rep Rev Volt: 30V
• Avg. Forward Curr (max): 0.2
• Rev Curr: 2uA
• Peak Non-repetitive Surge Current (max): 0.6A
• Forward Voltage: 0.8V
• Operating Temp Range: -55C to 125C
• Package Type: SOT-23
• Rev Recov Time: 5ns
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Product: Schottky Diodes
• Peak Reverse Voltage: 30 V
• Forward Continuous Current: 0.2 A
• Max Surge Current: 0.6 A
• Recovery Time: 5 ns
• Forward Voltage Drop: 0.8 V @ 0.1 A
• Maximum Reverse Leakage Current: 2 uA
• Operating Temperature Range: - 55 C to + 125 C
• Mounting Style: SMD/SMT
• Capacitance, Junction: 7.6 pF
• Current, Forward: 200 mA
• Power Dissipation: 200 mW
• Primary Type: Schottky Barrier
• Speed, Switching: Fast
• Temperature, Junction, Maximum: +125 °C
• Temperature, Operating: -55 to +125 °C
• Time, Recovery: 5 ns
• Voltage, Forward: 0.52 V
• Voltage, Reverse: 30 V
• Dc: 0546
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BAT54LT1GOSTR

Final Product/Process Change Notification #16266
SC88 and SC88A
MSQA6V1W5T2G
Test:
Precondition
Autoclave+PC Ta=121C RH=100% ~15 psig
TC+PC Ta= -65 C to 150 C
HTSL
DPA Per AECQ101, after 1000 cyc TC
RSH
ELECTRICAL CHARACTERIZATION PLAN:
Datasheet specifications and product electrical performance will remain unchanged
Characterization of each qual vehicle device will be performed to the following requirements:
ELECTRICAL CHARACTERIZATION RESULTS:
Available upon request
CHANGED PART IDENTIFICATION:
Products assembled with the Copper Wire from the ON Semiconductor facility will have a Finish
Good Date Code representing Work Week 35, 2009 (date code 9) or newer.
Issue Date: 08 Jun 2009
1) Three temperature characterization on 30 units from 3 lots
2) ESD performance ( HBM, MM) on 15 units from 1 lot
MSL1@ 260C , 3 X IR at 260 C/260 C
Ta=150C
Ta=260C, 10 sec dwell
Conditions:
Rev.14 Jun 2007
Interval:
1000 cyc
1008 hrs
96 hrs
Results
0/480
0/240
0/240
0/240
0/6
0/90
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