IRG4PC30UDPBF International Rectifier, IRG4PC30UDPBF Datasheet

IGBT W/DIODE 600V 23A TO247AC

IRG4PC30UDPBF

Manufacturer Part Number
IRG4PC30UDPBF
Description
IGBT W/DIODE 600V 23A TO247AC
Manufacturer
International Rectifier
Type
Ultrafastr

Specifications of IRG4PC30UDPBF

Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.1V @ 15V, 12A
Current - Collector (ic) (max)
23A
Power - Max
100W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads), TO-247AC
Capacitance, Gate
1100 pF
Current, Collector
23 A
Energy Rating
0.54 mJ
Package Type
TO-247AC
Polarity
N-Channel
Power Dissipation
100 W
Resistance, Thermal, Junction To Case
1.2 °C/W
Speed, Switching
8 to 40 kHz (Hard Switching), >200 kHz (Resonant Mode)
Voltage, Collector To Emitter Shorted
600 V
Voltage, Collector To Emitter, Saturation
2.52 V
Channel Type
N
Configuration
Single
Collector-emitter Voltage
600V
Collector Current (dc) (max)
23A
Gate To Emitter Voltage (max)
±20V
Pin Count
3 +Tab
Mounting
Through Hole
Operating Temperature (min)
-55C
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Dc Collector Current
23A
Collector Emitter Voltage Vces
600V
Power Dissipation Pd
100W
Collector Emitter Voltage V(br)ceo
600V
Operating Temperature Range
-55°C To +150°C
No. Of Pins
3
Current Rating
23A
Rohs Compliant
Yes
Transistor Type
IGBT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Lead Free Status / Rohs Status
RoHS Compliant part Electrostatic Device
Other names
*IRG4PC30UDPBF

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRG4PC30UDPBF
Manufacturer:
IR
Quantity:
20 000
Features
Features
Features
Features
Features
Benefits
Absolute Maximum Ratings
Thermal Resistance
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
• Generation -4 IGBT's offer highest efficiencies
• IGBT's optimized for specific application conditions
• HEXFRED diodes optimized for performance with
• Designed to be a "drop-in" replacement for equivalent
www.irf.com
• UltraFast: Optimized for high operating
• Generation 4 IGBT design provides tighter
• IGBT co-packaged with HEXFRED
• Industry standard TO-247AC package
R
R
R
R
Wt
V
I
I
I
I
I
I
V
P
P
T
T
LM
FM
IGBT's . Minimized recovery characteristics require
C
C
CM
F
kHz in resonant mode
parameter distribution and higher efficiency than
Generation 3
available
ultra-soft-recovery anti-parallel diodes for use in
bridge configurations
industry-standard Generation 3 IR IGBT's
STG
less/no snubbing
CES
GE
D
D
J
frequencies 8-40 kHz in hard switching, >200
@ T
JA
@ T
@ T
JC
JC
CS
@ T
@ T
C
C
C
C
C
= 100°C
= 25°C
= 100°C
= 25°C
= 100°C
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Q
Clamped Inductive Load Current R
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Parameter
Parameter
TM
ultrafast,
G
n-cha nn el
Min.
------
------
------
------
-----
300 (0.063 in. (1.6mm) from case)
IRG4PC30UD
C
E
10 lbf•in (1.1 N•m)
-55 to +150
UltraFast CoPack IGBT
Max.
6 (0.21)
TO-247AC
± 20
600
100
Typ.
------
------
23
12
92
92
12
92
42
0.24
-----
@V
V
CE(on) typ.
V
GE
CES
= 15V, I
Max.
------
------
1.2
2.5
40
= 600V
PD 91462B
C
1.95V
= 12A
12/30/00
Units
Units
g (oz)
°C/W
°C
W
V
A
V
1

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IRG4PC30UDPBF Summary of contents

Page 1

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Features Features Features Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution ...

Page 2

IRG4PC30UD Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown VoltageS 600 (BR)CES Temperature Coeff. of Breakdown Voltage ---- (BR)CES J V Collector-to-Emitter Saturation Voltage CE(on) V Gate Threshold Voltage GE(th Temperature Coeff. of Threshold ...

Page 3

Fig Typical Load Current vs. Frequency ° ...

Page 4

IRG4PC30UD (° Fig Maximum ...

Page 5

...

Page 6

IRG4PC30UD 2 150° 480V 15V 1 1.2 0.8 0.4 0 Collector-to-Emitter Current ( Fig Typical Switching ...

Page 7

° ° ...

Page 8

IRG4PC30UD Same ty pe device as D .U.T. 430µF 80% of Vce Fig. 18a - Test Circuit for Measurement off(diode d(on) ...

Page 9

µ www.irf.com ...

Page 10

IRG4PC30UD Q Repetitive rating: V =20V; pulse width limited by maximum junction temperature GE (figure 20 =80%( =20V, L=10µ CES GE S Pulse width 80µs; duty factor T Pulse width 5.0µs, single shot. 1 ...

Page 11

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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