IRG4PC30UDPBF International Rectifier, IRG4PC30UDPBF Datasheet - Page 5

• Manufacturer Part Number: IRG4PC30UDPBF
• Description: IGBT W/DIODE 600V 23A TO247AC
• Manufacturer: International Rectifier
• Type: Ultrafastr

Specifications of IRG4PC30UDPBF

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.1V @ 15V, 12A
• Current - Collector (ic) (max): 23A
• Power - Max: 100W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads), TO-247AC
• Capacitance, Gate: 1100 pF
• Current, Collector: 23 A
• Energy Rating: 0.54 mJ
• Package Type: TO-247AC
• Polarity: N-Channel
• Power Dissipation: 100 W
• Resistance, Thermal, Junction To Case: 1.2 °C/W
• Speed, Switching: 8 to 40 kHz (Hard Switching), >200 kHz (Resonant Mode)
• Voltage, Collector To Emitter Shorted: 600 V
• Voltage, Collector To Emitter, Saturation: 2.52 V
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 600V
• Collector Current (dc) (max): 23A
• Gate To Emitter Voltage (max): ±20V
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (min): -55C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Dc Collector Current: 23A
• Collector Emitter Voltage Vces: 600V
• Power Dissipation Pd: 100W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -55°C To +150°C
• No. Of Pins: 3
• Current Rating: 23A
• Rohs Compliant: Yes
• Transistor Type: IGBT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device
• Other names: *IRG4PC30UDPBF

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Fig. 9 - Typical Switching Losses vs. Gate
2 0 0 0
1 6 0 0
1 2 0 0
8 0 0
4 0 0
0 . 6 0
0 . 5 8
0 . 5 6
0 . 5 4
0 . 5 2
0 . 5 0
0
1
Fig. 7 - Typical Capacitance vs.
0
V
V
T
Collector-to-Emitter Voltage
I
V
C C
G E
J
C
C E
C
C
C
= 12A
= 25°C
= 480V
= 15V
ie s
o e s
re s
, C o lle c to r-to -E m itte r V o lta g e (V )
1 0
R , Gate Resistance (
V
C
C
C
Resistance
G
G E
ie s
re s
o e s
= 0V ,
= C
= C
= C
2 0
g e
gc
ce
+ C
+ C
1 0
3 0
g c
g c
f = 1 M H z
, C
4 0
ce
S H O R TE D
5 0
)
1 0 0
6 0
A
A
0.1
2 0
1 6
1 2
1 0
Fig. 10 - Typical Switching Losses vs.
8
4
0
1
-60
0
V
R
V
V
I
Fig. 8 - Typical Gate Charge vs.
C E
C
G
G E
C C
-40
= 1 2 A
= 15V
= 480V
= 23
= 4 0 0 V
Gate-to-Emitter Voltage
Junction Temperature
-20
Q , T o ta l G a te C h a rg e (n C )
1 0
T , Junction Temperature (°C)
J
g
IRG4PC30UD
0
2 0
2 0
4 0
6 0
3 0
8 0
1 0 0 1 2 0 1 4 0 1 6 0
I = 24A
I = 12A
I = 6.0A
4 0
C
C
C
5 0
5
A
A