APT65GP60L2DQ2G Microsemi Power Products Group, APT65GP60L2DQ2G Datasheet - Page 6

• Manufacturer Part Number: APT65GP60L2DQ2G
• Description: IGBT 600V 198A 833W TO264
• Manufacturer: Microsemi Power Products Group
• Series: POWER MOS 7®r

Specifications of APT65GP60L2DQ2G

• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 65A
• Current - Collector (ic) (max): 198A
• Power - Max: 833W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-264
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APT65GP60L2DQ2GMI; APT65GP60L2DQ2GMI

V
CC
Figure 23, Turn-off Switching Waveforms and Definitions
65GP60B2 @ 125C Eoff
Figure 21, Inductive Switching Test Circuit
90%
Switching Energy
t
d(off)
90%
I
C
D.U.T.
V
t
10%
f
CE
APT40DQ60
A
Collector Voltage
Gate Voltage
Collector Current
0
T
T
J
= 125 °C
Figure 22, Turn-on Switching Waveforms and Definitions
Figure 24, E ON1 Test Circuit
Gate Voltage
V
TEST
100uH
A
10%
DRIVER*
A
5%
10%
t
r
t
d(on)
90%
*DRIVER SAME TYPE AS D.U.T.
Switching Energy
5 %
V
CLAMP
Collector Voltage
Collector Current
I
C
V
CE
D.U.T.
T
J
= 125 °C
B