APT25GN120BG Microsemi Power Products Group, APT25GN120BG Datasheet

IGBT 1200V 67A 272W TO247

APT25GN120BG

Manufacturer Part Number
APT25GN120BG
Description
IGBT 1200V 67A 272W TO247
Manufacturer
Microsemi Power Products Group
Datasheet

Specifications of APT25GN120BG

Igbt Type
Trench and Field Stop
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
2.1V @ 15V, 25A
Current - Collector (ic) (max)
67A
Power - Max
272W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
APT25GN120BG
Manufacturer:
APT
Quantity:
20 000
TYPICAL PERFORMANCE CURVES
Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra
low V
conduction loss. Easy paralleling is a result of very tight parameter distribution and
a slightly positive V
extremely reliable operation, even in the event of a short circuit fault. Low gate charge
simplifies gate drive design and minimizes losses.
• Trench Gate: Low V
• Easy Paralleling
• Integrated Gate Resistor: Low EMI, High Reliability
Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS
MAXIMUM RATINGS
STATIC ELECTRICAL CHARACTERISTICS
V
Symbol
Symbol
T
V
V
1200V Field Stop
SSOA
R
(BR)CES
V
J
CE(ON)
GE(TH)
I
I
V
I
,T
I
I
GES
P
CES
G(int)
T
CES
CM
C1
C2
GE
CE(ON)
D
L
STG
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
and are ideal for low frequency applications that require absolute minimum
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current @ T
Continuous Collector Current @ T
Pulsed Collector Current
Switching Safe Operating Area @ T
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
Gate Threshold Voltage
Collector-Emitter On Voltage (V
Collector-Emitter On Voltage (V
Collector Cut-off Current (V
Collector Cut-off Current (V
Gate-Emitter Leakage Current (V
Integrated Gate Resistor
CE(ON)
CE(on)
temperature coefficient. A built-in gate resistor ensures
1
(V
CE
CE
CE
= V
= 1200V, V
= 1200V, V
APT Website - http://www.advancedpower.com
®
GE
GE
C
C
GE
GE
J
= 25°C
= 110°C
= 15V, I
= 15V, I
= 150°C
= ±20V)
, I
C
GE
= 1mA, T
GE
GE
C
C
= 0V, I
= 25A, T
= 25A, T
= 0V, T
= 0V, T
j
C
= 25°C)
= 150µA)
j
j
= 25°C)
= 125°C)
j
j
= 25°C)
= 125°C)
All Ratings: T
APT25GN120B
APT25GN120BG* APT25GN120SG*
2
2
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
C
= 25°C unless otherwise specified.
1200
MIN
1.4
1200V
5
APT25GN120B(G)
75A @ 1200V
-55 to 150
APT25GN120S
1200
TYP
±30
272
300
5.8
1.7
1.9
G
67
33
75
8
APT25GN120B_S(G)
C
E
(B)
G
MAX
TBD
100
600
6.5
2.1
G
D
C
C
E
3
Amps
Watts
UNIT
Units
Volts
PAK
Volts
°C
µA
nA
E
(S)

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APT25GN120BG Summary of contents

Page 1

... Collector Cut-off Current (V I CES Collector Cut-off Current (V I Gate-Emitter Leakage Current (V GES R Integrated Gate Resistor G(int) CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT25GN120B APT25GN120BG* APT25GN120SG* ® All Ratings 25° 110° 150° 0V 150µA) ...

Page 2

Characteristic Symbol C Input Capacitance ies C Output Capacitance oes C Reverse Transfer Capacitance res V Gate-to-Emitter Plateau Voltage GEP Q 3 Total Gate Charge g Q Gate-Emitter Charge ge Q Gate-Collector ("Miller ") Charge gc SSOA Switching Safe Operating ...

Page 3

PULSE TEST<0.5 % DUTY CYCLE 3.5 3 2.5 2 1.5 1.0 0.5 0 1.10 1.05 1.00 0.95 0. ...

Page 4

V = 15V 800V 25°C 125° 4.3Ω 100µ COLLECTOR TO EMITTER CURRENT (A) CE FIGURE 9, Turn-On ...

Page 5

TYPICAL PERFORMANCE CURVES 4,000 1,000 500 100 COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) CE Figure 17, Capacitance vs Collector-To-Emitter Voltage 0. 0.9 0.40 0.7 0.30 0.5 0.20 0.3 0.10 0.1 0. ...

Page 6

APT30DQ120 D.U.T. Figure 21, Inductive Switching Test Circuit 90% t d(off) 90 Switching Energy Figure 23, Turn-off Switching Waveforms and Definitions Figure 22, Turn-on Switching Waveforms and Definitions Gate Voltage T ...

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