APT30GN60BDQ2G Microsemi Power Products Group, APT30GN60BDQ2G Datasheet - Page 2

• Manufacturer Part Number: APT30GN60BDQ2G
• Description: IGBT 600V 63A 203W TO247
• Manufacturer: Microsemi Power Products Group

Specifications of APT30GN60BDQ2G

• Igbt Type: Trench and Field Stop
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.9V @ 15V, 30A
• Current - Collector (ic) (max): 63A
• Power - Max: 203W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

DYNAMIC CHARACTERISTICS
DYNAMIC CHARACTERISTICS
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, I
3 See MIL-STD-750 Method 3471.
4 E
5 E
6 E
7 R
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol
SCSOA
Symbol
SSOA
adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in fi gure 21, but with a Silicon Carbide diode.
loss. (See Figures 21, 22.)
Microsemi reserves the right to change, without notice, the specifi cations and information contained herein.
V
t
t
t
t
R
R
C
E
E
E
E
C
C
Q
Q
d(on)
d(off)
E
d(on)
d(off)
E
W
on1
on2
off
Q
G
GEP
on1
on2
on1
on2
θ
θ
oes
t
t
t
t
res
ies
ge
off
off
gc
r
r
f
f
g
JC
JC
is external gate resistance, not including R
T
is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current
is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate-to-Emitter Plateau Voltage
Total Gate Charge
Gate-Emitter Charge
Gate-Collector ("Miller") Charge
Switching Safe Operating Area
Short Circuit Safe Operating Area
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy
Turn-on Switching Energy (With Diode)
Turn-off Switching Energy
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy
Turn-on Switching Energy (With Diode)
Turn-off Switching Energy
Characteristic
Junction to Case (IGBT)
Junction to Case (DIODE)
Package Weight
ces
includes both IGBT and diode leakages
3
6
4
4
66
4
Gint
nor gate driver impedance. (MIC4452)
55
5
T
Inductive Switching (125°C)
J
15V, L = 100µH,V
Inductive Switching (25°C)
= 150°C, R
T
V
J
V
CC
= 150°C, R
GE
Test Conditions
= 360V, V
Capacitance
Gate Charge
T
= 0V, V
V
V
R
V
R
T
V
V
V
f = 1 MHz
J
CC
CC
CE
I
I
G
I
G
J
GE
GE
GE
C
C
C
= +125°C
= +25°C
= 4.3Ω
= 4.3Ω
= 30A
= 30A
= 30A
G
= 300V
= 400V
= 400V
= 15V
= 15V
= 15V
= 4.3Ω
CE
G
GE
= 4.3Ω
CE
= 25V
7
7
= 15V,
= 600V
7
, V
7
GE
=
MIN
MIN
90
6
APT30GN60BD_SDQ2(G)
1750
TYP
165
155
525
565
700
180
555
950
895
9.0
TYP
70
50
10
90
12
14
55
12
14
75
5.9
MAX
MAX
.74
.67
UNIT
UNIT
°C/W
nC
pF
µ
µ
µ
gm
ns
ns
V
A
s
J
J