APT50GT120LRDQ2G Microsemi Power Products Group, APT50GT120LRDQ2G Datasheet

IGBT 1200V 106A 694W TO264

APT50GT120LRDQ2G

Manufacturer Part Number
APT50GT120LRDQ2G
Description
IGBT 1200V 106A 694W TO264
Manufacturer
Microsemi Power Products Group
Series
Thunderbolt IGBT®r
Datasheet
1.APT50GT120LRDQ2G.pdf (9 pages)

Specifications of APT50GT120LRDQ2G

Igbt Type
NPT
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
3.7V @ 15V, 50A
Current - Collector (ic) (max)
106A
Power - Max
694W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-264
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
APT50GT120LRDQ2GMI
APT50GT120LRDQ2GMI

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
APT50GT120LRDQ2G
Manufacturer:
Microsemi Power Products Group
Quantity:
135
The Thunderblot IGBT
Through Technology, the Thunderblot IGBT
switching speed.
• Low Forward Voltage Drop
• Low Tail Current
• RBSOA and SCSOA Rated
• Intergrated Gate Resistor: Low EMI, High Reliability
TYPICAL PERFORMANCE CURVES
MAXIMUM RATINGS
STATIC ELECTRICAL CHARACTERISTICS
V
Symbol
Symbol
T
V
V
SSOA
R
(BR)CES
V
J
CE(ON)
GE(TH)
I
I
V
I
,T
I
I
GES
P
CES
G(int)
T
CES
CM
C1
C2
GE
D
L
STG
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current
Continuous Collector Current @ T
Pulsed Collector Current
Switching Safe Operating Area @ T
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
Gate Threshold Voltage
Collector-Emitter On Voltage (V
Collector-Emitter On Voltage (V
Collector Cut-off Current (V
Collector Cut-off Current (V
Gate-Emitter Leakage Current (V
Intergrated Gate Resistor
®
is a new generation of high voltage power IGBTs. Using Non- Punch
Thunderbolt IGBT
1
(V
• High Freq. Switching to 50KHz
• Ultra Low Leakage Current
CE
CE
CE
@ T
8
= V
= 1200V, V
= 1200V, V
APT Website - http://www.advancedpower.com
®
@ T
®
GE
GE
C
C
offers superior ruggedness and ultrafast
GE
GE
= 150°C
J
= 110°C
= 15V, I
= 15V, I
C
= 150°C
= ±20V)
, I
= 25°C
C
GE
= 2mA, T
GE
GE
C
C
= 0V, I
= 50A, T
= 50A, T
= 0V, T
= 0V, T
®
j
C
= 25°C)
= 3mA)
j
j
= 25°C)
= 125°C)
j
j
= 25°C)
= 125°C)
All Ratings: T
2
2
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
C
= 25°C unless otherwise specified.
APT50GT120LRDQ2(G)
1200
MIN
APT50GT120LRDQ2G*
4.5
2.7
APT50GT120LRDQ2
150A @ 1200V
-55 to 150
APT50GT120LRDQ2(G)
1200
TYP
±30
106
150
694
300
5.5
3.2
4.0
50
5
1200V
G
MAX
TBD
300
300
6.5
3.7
TO-264
C
E
Amps
Watts
UNIT
Units
Volts
Volts
°C
µA
nA
Ω

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APT50GT120LRDQ2G Summary of contents

Page 1

... 25° 1200V 0V 125° ±20V) GE APT Website - http://www.advancedpower.com 1200V APT50GT120LRDQ2(G) APT50GT120LRDQ2 APT50GT120LRDQ2G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. TO-264 G = 25°C unless otherwise specified. C APT50GT120LRDQ2(G) 1200 ±30 106 50 150 150A @ 1200V 694 -55 to 150 300 MIN TYP ...

Page 2

Symbol Characteristic C Input Capacitance ies C Output Capacitance oes C Reverse Transfer Capacitance res V Gate-to-Emitter Plateau Voltage GEP 3 Q Total Gate Charge g Q Gate-Emitter Charge ge Q Gate-Collector ("Miller ") Charge gc Switching Safe Operating Area ...

Page 3

V = 15V GE 100 25° 125° COLLECTER-TO-EMITTER VOLTAGE (V) CE FIGURE 1, Output Characteristics(T J 140 250µs PULSE ...

Page 4

V = 15V 800V 25°C or 125° 1Ω 100µ COLLECTOR TO EMITTER ...

Page 5

TYPICAL PERFORMANCE CURVES 4,000 1,000 500 100 COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) CE Figure 17, Capacitance vs Collector-To-Emitter Voltage 0. 0.9 0.16 0.7 0.12 0.5 0.08 0.3 0.04 0.1 0. ...

Page 6

APT40DQ120 90% Gate Voltage t d(off) 90% Collector Voltage t f 10% Collector Current Switching Energy Figure 23, Turn-off Switching Waveforms and Definitions 10% t d(on) Figure 22, Turn-on Switching Waveforms and Definitions T = 125° Gate Voltage ...

Page 7

TYPICAL PERFORMANCE CURVES ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE MAXIMUM RATINGS Symbol Characteristic / Test Conditions I (AV) Maximum Average Forward Current ( (RMS) RMS Forward Current (Square wave, 50% duty) F Non-Repetitive Forward Surge Current (T I FSM ...

Page 8

T = 175° 125° -55° ANODE-TO-CATHODE VOLTAGE (V) F Figure 25. Forward Current vs. Forward Voltage 5000 T = ...

Page 9

TYPICAL PERFORMANCE CURVES +18V Forward Conduction Current /dt - Rate of Diode Current Change Through Zero Crossing Maximum Reverse Recovery Current. RRM Reverse R ecovery ...

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