APT75GP120B2G Microsemi Power Products Group, APT75GP120B2G Datasheet
APT75GP120B2G
Specifications of APT75GP120B2G
APT75GP120B2GMI
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APT75GP120B2G Summary of contents
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POWER MOS 7 ® The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high ...
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DYNAMIC CHARACTERISTICS Symbol Characteristic Input Capacitance C ies C Output Capacitance oes C Reverse Transfer Capacitance res V Gate-to-Emitter Plateau Voltage GEP 3 Q Total Gate Charge g Q Gate-Emitter Charge ge Q Gate-Collector ("Miller ") Charge gc RBSOA Reverse ...
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TYPICAL PERFORMANCE CURVES 160 15V. 250µs PULSE TEST 140 <0.5 % DUTY CYCLE 120 100 =25° =125° COLLECTER-TO-EMITTER VOLTAGE (V) CE FIGURE ...
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V = 10V 15V 600V 25°C or 125° 100 µ 100 120 140 160 ...
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TYPICAL PERFORMANCE CURVES 20,000 10,000 1,000 500 100 COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) CE Figure 17, Capacitance vs Collector-To-Emitter Voltage 0.14 0.12 0.9 0.10 0.7 0.08 0.5 0.06 0.3 0.04 0.1 0.02 0.05 0 ...
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APT60DF120 D.U.T. Figure 21, Inductive Switching Test Circuit 90% Gate Voltage t t d(off) f Collector Voltage 90% 10% Collector Current Switching Energy Figure 23, Turn-off Switching Waveforms and Definitions APT’s products are ...