IRG4BC20MD-SPBF International Rectifier, IRG4BC20MD-SPBF Datasheet
IRG4BC20MD-SPBF
Specifications of IRG4BC20MD-SPBF
Related parts for IRG4BC20MD-SPBF
IRG4BC20MD-SPBF Summary of contents
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... Mounting Torque, 6- Screw. Thermal Resistance Parameter R Junction-to-Case - IGBT JC R Junction-to-Case - Diode JC R Case-to-Sink, flat, greased surface CS R Junction-to-Ambient, typical socket mount JA Wt Weight www.irf.com IRG4BC20MD-S C =15V n-cha nn el -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbf•in (1.1 N•m) Min. ------ ------ ------ ----- ------ 2 (0.07) PD -94116 ...
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... IRG4BC20MD-S Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown VoltageS 600 (BR)CES Temperature Coeff. of Breakdown Voltage ---- (BR)CES J V Collector-to-Emitter Saturation Voltage CE(on) V Gate Threshold Voltage GE(th Temperature Coeff. of Threshold Voltage ---- GE(th) J Forward Transconductance Zero Gate Voltage Collector Current CES V Diode Forward Voltage Drop FM I Gate-to-Emitter Leakage Current ...
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... Fig Typical Output Characteristics www.irf.com Frequency ( kHz ) (Load Current = I of fundamental) RMS 100 T = 150 25°C 0.1 10.0 6 Fig Typical Transfer Characteristics IRG4BC20MD-S Duty cycle : 50 125°C Tsink = 90°C Gate drive as specified Turn-on losses include effects of reverse recovery Power Dissipation = 13W 10 ° J ° 50V CC 5µ ...
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... IRG4BC20MD 100 T , Case Temperature ( C) C Fig Maximum Collector Current vs. Case Temperature 0.50 1 0.20 0.10 0.05 0.1 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) 0.01 0.00001 0.0001 Fig Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case 4 4 15V 80µs PULSE WIDTH 3.0 2.0 1.0 ...
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... Fig Typical Switching Losses vs. Gate Resistance www.irf.com SHORTED 100 0 Fig Typical Gate Charge vs. 100 15V 480V -60 -40 -20 Fig Typical Switching Losses vs. IRG4BC20MD-S = 400V = 11A Total Gate Charge (nC) G Gate-to-Emitter Voltage 22A 11A 5. 100 120 140 160 Junction Temperature (°C) Junction Temperature 40 5 ...
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... IRG4BC20MD-S 10 150° 15V 8 480V 6.0 4.0 2.0 0 Collector Current (A) Fig Typical Switching Losses vs. Collector-to-Emitter Current 0.1 Fig Maximum Forward Voltage Drop vs. Instantaneous Forward Current 6 100 20V 125° 0° 5° 5° 0.4 0.8 1.2 1.6 2.0 2.4 2.8 Fo rwa rd V oltage D rop - V ...
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... ° ° /µ Fig Typical Reverse Recovery vs ° ° . / /µs) f Fig Typical Stored Charge vs. di www.irf.com . Fig Typical Recovery Current vs ° ° 4 /dt Fig Typical di f IRG4BC20MD ° ° 8 . /µ . 8 / /µs) f /dt vs. di /dt (rec / ...
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... IRG4BC20MD-S Same ty pe device as D .U.T. 430µF 80% of Vce Fig. 18a - Test Circuit for Measurement off(diode d(on Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Defining d( d(off) f Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining Fig. 18d - µ S ...
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... Figure 18e µ Figure 19. www.irf.com D.U. 480V Figure 20. IRG4BC20MD-S 480V @25° ...
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... IRG4BC20MD Pak Package Outline 1 0.54 (.4 15) 1 0.29 (.4 05) 1.4 0 (.055 ) - AX. 2 1 (.6 10) 1 (.5 80 1.40 (.0 55) 3X 1.14 (.0 45) 0 .93 (. .69 (. .08 (. .25 (. FTER IP & 4.5M , 198 TRO L LIN SIO ATSINK & Pak Part Marking Information TIO 4.69 (.1 85) 4.20 (.1 65) 1 ...
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... Data and specifications subject to change without notice. This product has been designed and qualified for the industrial market. Qualification Standards can be found on IR’s Web site. Visit us at www.irf.com for sales contact information. 3/01 IRG4BC20MD-S 0 0 4.30 (. 3.90 (. 4.72 (. ...
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Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...