IRG4BC20MD-SPBF International Rectifier, IRG4BC20MD-SPBF Datasheet - Page 4

• Manufacturer Part Number: IRG4BC20MD-SPBF
• Description: IGBT N-CH W/DIODE 600V 18A D2PAK
• Manufacturer: International Rectifier

Specifications of IRG4BC20MD-SPBF

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.1V @ 15V, 11A
• Current - Collector (ic) (max): 18A
• Power - Max: 60W
• Input Type: Standard
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 600V
• Gate To Emitter Voltage (max): ±20V
• Pin Count: 2 +Tab
• Mounting: Surface Mount
• Operating Temperature (min): -55
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Dc Collector Current: 18A
• Collector Emitter Voltage Vces: 2.1V
• Power Dissipation Pd: 60W
• Collector Emitter Voltage V(br)ceo: 600V
• Collector Emitter Saturation Voltage Vce(sat): 2.1V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Compliant
• Other names: *IRG4BC20MD-SPBF

IRG4BC20MD-S
4
0.01
Fig. 4 - Maximum Collector Current vs.
20
15
10
0.1
10
0.00001
5
0
1
25
D = 0.50
Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case
0.20
0.10
0.05
0.02
0.01
50
Case Temperature
T , Case Temperature ( C)
C
75
(THERMAL RESPONSE)
0.0001
SINGLE PULSE
100
°
125
t , Rectangular Pulse Duration (sec)
1
0.001
150
Fig. 5 - Typical Collector-to-Emitter Voltage
4.0
3.0
2.0
1.0
-60 -40 -20
0.01
V GE = 15V
80µs PULSE WIDTH
vs. Junction Temperature
T J , Junction Temperature (°C)
Notes:
1. Duty factor D = t / t
2. Peak T = P
0
J
20
DM
40
x Z
1
0.1

60
thJC
2
P
I C = 11A
I C = 5.5A
I C = 22A
DM
+ T
80 100 120 140
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C
t
1
t
2
1