IRG4BC20MD-SPBF International Rectifier, IRG4BC20MD-SPBF Datasheet - Page 3

• Manufacturer Part Number: IRG4BC20MD-SPBF
• Description: IGBT N-CH W/DIODE 600V 18A D2PAK
• Manufacturer: International Rectifier

Specifications of IRG4BC20MD-SPBF

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.1V @ 15V, 11A
• Current - Collector (ic) (max): 18A
• Power - Max: 60W
• Input Type: Standard
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 600V
• Gate To Emitter Voltage (max): ±20V
• Pin Count: 2 +Tab
• Mounting: Surface Mount
• Operating Temperature (min): -55
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Dc Collector Current: 18A
• Collector Emitter Voltage Vces: 2.1V
• Power Dissipation Pd: 60W
• Collector Emitter Voltage V(br)ceo: 600V
• Collector Emitter Saturation Voltage Vce(sat): 2.1V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Compliant
• Other names: *IRG4BC20MD-SPBF

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100
Fig. 2 - Typical Output Characteristics
0.1
1.5
1.0
0.5
0.0
10
1
0.1
0.1
V CE , Collector-to-Emitter Voltage (V)
T J = 150°C
60% of rated
Ideal diodes
voltage
1.0
Fig. 1 - Typical Load Current vs. Frequency
V GE = 15V
20µs PULSE WIDTH
T J = 25°C
(Load Current = I
1
f , Frequency ( kHz )
10.0
RMS
of fundamental)
100
0.1
10
1
6
Fig. 3 - Typical Transfer Characteristics
T = 150 C
J
V
GE
IRG4BC20MD-S
8
, Gate-to-Emitter Voltage (V)
10
°
T = 25 C
J
Duty cycle : 50%
Tj = 125°C
Tsink = 90°C
Gate drive as specified
Turn-on losses include effects of
reverse recovery
Power Dissipation = 13W
10
°
V
5µs PULSE WIDTH
12
CC
= 50V
14
3
100
16