IRGB10B60KDPBF International Rectifier, IRGB10B60KDPBF Datasheet

IGBT W/DIODE 600V 22A TO-220AB

IRGB10B60KDPBF

Manufacturer Part Number
IRGB10B60KDPBF
Description
IGBT W/DIODE 600V 22A TO-220AB
Manufacturer
International Rectifier
Type
Ultrafastr

Specifications of IRGB10B60KDPBF

Igbt Type
NPT
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.2V @ 15V, 10A
Current - Collector (ic) (max)
22A
Power - Max
156W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Capacitance, Gate
620 pF
Current, Collector
22 A
Energy Rating
390 μJ
Package Type
TO-220AB
Polarity
N-Channel
Power Dissipation
156 W
Resistance, Thermal, Junction To Case
0.8 °C/W
Speed, Switching
10 to 30 kHz
Voltage, Collector To Emitter Shorted
600 V
Voltage, Collector To Emitter, Saturation
1.8 V
Transistor Type
IGBT
Dc Collector Current
22A
Collector Emitter Voltage Vces
2.2V
Power Dissipation Pd
104W
Collector Emitter Voltage V(br)ceo
600V
Operating Temperature Range
-55°C To +150°C
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRGB10B60KDPBF

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRGB10B60KDPBF
Quantity:
9 000
Features
Benefits
• Benchmark Efficiency for Motor Control.
• Rugged Transient Performance.
• Low EMI.
• Excellent Current Sharing in Parallel Operation.
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
• Low VCE (on) Non Punch Through IGBT Technology.
• Low Diode VF.
• 10µs Short Circuit Capability.
• Square RBSOA.
• Ultrasoft Diode Reverse Recovery Characteristics.
• Positive VCE (on) Temperature Coefficient.
• Lead-Free (only the TO-220AB version is currently
Thermal Resistance
Absolute Maximum Ratings
R
R
R
R
R
Wt
V
I
I
I
I
I
I
I
V
P
P
T
T
www.irf.com
C
C
CM
LM
F
F
FM
available in a Lead-Free configuration)
J
STG
CES
GE
D
D
θJC
θJC
θCS
θJA
θJA
@ T
@ T
@ T
@ T
@ T
@ T
C
C
C
C
C
C
= 25°C
= 100°C
= 25°C
= 100°C
= 25°C
= 100°C
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Junction-to-Ambient (PCB Mount, steady state)
Weight
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Parameter
Parameter
IRGB10B60KDPbF

G
TO-220AB
n-channel
300 (0.063 in. (1.6mm) from case)
Min.
–––
–––
–––
–––
–––
–––
E
C
-55 to +150
IRGS10B60KD
IRGB10B60KDPbF
Max.
± 20
600
156
Typ.
22
12
44
44
22
10
44
62
0.50
1.44
–––
–––
–––
–––
D
IRGSL10B60KD
2
V
I
t
V
Pak
C
sc
IRGS10B60KD
CES
CE(on)
= 12A, T
> 10µs, T
= 600V
typ. = 1.8V
Max.
IRGSL10B60KD
–––
–––
0.8
3.4
62
40
C
TO-262
=100°C
J
=150°C
Units
Units
°C/W
W
°C
V
A
V
g
1
12/31/03

Related parts for IRGB10B60KDPBF

IRGB10B60KDPBF Summary of contents

Page 1

... IRGB10B60KDPbF IRGS10B60KD IRGSL10B60KD 600V CES I = 12A > 10µ n-channel CE(on) 2 TO-220AB D Pak IRGB10B60KDPbF IRGS10B60KD Max. 600 ± 20 156 62 -55 to +150 300 (0.063 in. (1.6mm) from case) Min. Typ. ––– ––– ––– ––– ––– ...

Page 2

... IRGB10B60KDPBF/S/SL10B60KD Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES Temperature Coeff. of Breakdown Voltage ∆V /∆T (BR)CES J V Collector-to-Emitter Saturation Voltage CE(on) V Gate Threshold Voltage GE(th Temperature Coeff. of Threshold Voltage ––– ∆ ∆ GE(th Forward Transconductance fe I Zero Gate Voltage Collector Current ...

Page 3

... IRGB10B60KDPBF/S/SL10B60KD 100 120 140 160 T C (°C) Fig Maximum DC Collector Current vs. Case Temperature 100 0 100 V CE (V) Fig Forward SOA T = 25°C; T 150°C ≤ www.irf.com 180 160 140 120 100 Fig Power Dissipation vs. Case 100 10 µ µs 100 µs 1 1ms 0 1000 ...

Page 4

... IRGB10B60KDPBF/S/SL10B60KD 18V 35 VGE = 15V VGE = 12V 30 VGE = 10V VGE = 8. (V) Fig Typ. IGBT Output Characteristics T = -40° 80µ 18V 35 VGE = 15V VGE = 12V 30 VGE = 10V VGE = 8. (V) Fig Typ. IGBT Output Characteristics T = 150° 80µ Fig Typ. IGBT Output Characteristics 40 35 ...

Page 5

... IRGB10B60KDPBF/S/SL10B60KD (V) Fig Typical -40° 5. 10A 15A (V) Fig Typical 150°C J www.irf.com 5. 10A 15A Fig Typical V vs 150° Fig Typ. Transfer Characteristics vs 5. 10A 15A (V) vs 25° 25° 150° 25° ( 50V 10µ ...

Page 6

... IRGB10B60KDPBF/S/SL10B60KD 800 700 600 500 E OFF 400 300 E ON 200 100 (A) Fig Typ. Energy Loss vs 150°C; L=200µ 47Ω 15V G GE 500 E OFF 450 400 350 300 250 200 150 100 Ω ) Fig Typ. Energy Loss vs 150°C; L=200µH; V ...

Page 7

... IRGB10B60KDPBF/S/SL10B60KD Ω Ω Ω 100 Ω (A) Fig Typical Diode 150° 500 di F /dt (A/µs) Fig. 19- Typical Diode 400V 15V 10A 150° www.irf.com Fig Typical Diode I vs 1200 1100 1000 900 800 700 600 500 400 0 1000 1500 Fig Typical Diode Q vs ...

Page 8

... IRGB10B60KDPBF/S/SL10B60KD 450 400 350 300 250 200 150 100 50 0 1000 100 (V) Fig. 22- Typ. Capacitance vs 0V 1MHz (A) Fig Typical Diode E vs 150° Cies Coes 6 4 Cres 100 Fig Typical Gate Charge vs Ω 22 Ω 47 Ω 100 Ω 300V 400V Total Gate Charge (nC) ...

Page 9

... IRGB10B60KDPBF/S/SL10B60KD 0.50 0.20 0.1 0.10 0.05 0.01 0.02 0.01 SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-6 1E-5 Fig 24. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT 0.50 1 0.20 0.10 0.05 0.01 0.1 0.02 0.01 SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-6 1E-5 Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) www ...

Page 10

... IRGB10B60KDPBF/S/SL10B60KD DUT 0 1K Fig.C.T.1 - Gate Charge Circuit (turn-off) Driver DC DUT Fig.C.T.3 - S.C.SOA Circuit 10 L VCC diode clamp / 360V DUT Rg Fig.C.T.5 - Resistive Load Circuit L DUT 480V Rg Fig.C.T.2 - RBSOA Circuit DUT DUT / DRIVER Rg Fig.C.T.4 - Switching Loss Circuit VCC www.irf.com VCC ...

Page 11

... IRGB10B60KDPBF/S/SL10B60KD 600 500 400 90 300 tf 200 100 Eoff Loss -100 -0.20 0.00 0.20 0.40 time(µs) Fig. WF1- Typ. Turn-off Loss Waveform @ T = 150°C using Fig. CT.4 J 100 -100 -200 -300 Peak I -400 RR -500 -600 -0.15 -0.05 0.05 0.15 time (µS) Fig ...

Page 12

... IRGB10B60KDPBF/S/SL10B60KD Dimensions are shown in millimeters (inches) 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) 15.24 (.600) 14.84 (.584 14.09 (.555) 13.47 (.530) 1.40 (.055) 3X 1.15 (.045) 2.54 (.100) 2X NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH E XAMPL HIS 1010 ...

Page 13

... IRGB10B60KDPBF/S/SL10B60KD 2 2 www.irf.com 13 ...

Page 14

... IRGB10B60KDPBF/S/SL10B60KD TO-262 Package Outline TO-262 Part Marking Information 14 IGBT 1- GATE 2- COLLECTOR 3- EMITTER 4- COLLECTOR www.irf.com ...

Page 15

... IRGB10B60KDPBF/S/SL10B60KD 2 TRR FEED DIRECTION 1.85 (.073) 1.65 (.065) TRL 10.90 (.429) 10.70 (.421) FEED DIRECTION 13.50 (.532) 12.80 (.504) 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. Notes:  This is only applied to TO-220AB package ‚ ...

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