IRGP30B120KD-EP International Rectifier, IRGP30B120KD-EP Datasheet
IRGP30B120KD-EP
Specifications of IRGP30B120KD-EP
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IRGP30B120KD-EP Summary of contents
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... Case-to-Sink, flat, greased surface θCS R Junction-to-Ambient, typical socket mount θJA W Weight t Z Transient Thermal Impedance Junction-to-Case θ JC www.irf.com IRGP30B120KD-E G N-channel (Fig.1) (Fig.1) (Fig.3, Fig. CT.5) (Fig.4, Fig. CT.2) (Fig.2) (Fig.2) 300, (0.063 in. (1.6mm) from case) 10 lbf•in (1.1N•m) Min. ––– ...
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... IRGP30B120KD-E Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES ΔV / ΔTj Temperature Coeff. of Breakdown Voltage (BR)CES Collector-to-Emitter Saturation V Voltage CE(on) V Gate Threshold Voltage GE(th) ΔV / ΔTj Temperature Coeff. of Threshold Voltage GE(th) g Forward Transconductance fe I Zero Gate Voltage Collector Current ...
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... C 1000 100 100 V (V) CE www.irf.com 120 160 PULSED 2μ s 10μs 100μs 1ms 10ms DC 1000 10000 IRGP30B120KD-E Fig.2 - Power Dissipation vs. Case Temperature 320 280 240 200 160 120 120 T (°C) C Fig.4 - Reverse Bias SOA Tj = 150° 15V GE 1000 100 ...
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... IRGP30B120KD-E Fig.5 - Typical IGBT Output Characteristics Tj= -40°C; tp=300μ 18V 15V 12V 10V Fig.7 - Typical IGBT Output Characteristics Tj=125°C; tp=300μ 18V 15V 12V 10V ( (V) Fig.6 - Typical IGBT Output Characteristics Tj=25°C; tp=300μ 18V 15V 12V 10V (V) CE Fig ...
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... V (V) GE www.irf.com =10A CE I =25A CE I =50A ( =10A CE I =25A CE I =50A IRGP30B120KD-E Fig.10 - Typical Tj= 25° (V) GE Fig.12 - Typ. Transfer Characteristics V =20V; tp=20μs CE 250 Tj=25°C 225 Tj=125°C 200 175 150 125 100 75 50 Tj=125°C 25 Tj=25°C ...
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... IRGP30B120KD-E Fig.13 - Typical Energy Loss vs Ic Tj=125°C; L=200μH; V Rg=22 Ω 8000 7000 6000 5000 4000 3000 2000 1000 (A) C Fig.15 - Typical Energy Loss vs Rg Tj=125°C; L=200μ =25A; V =15V CE GE 3500 3300 3100 2900 2700 2500 2300 2100 ...
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... I =25A; Tj=125° Rg=5 Ω Rg=51 Ω 500 (A/μs) F www.irf.com / =15V Rg=10 Ω Rg=22 Ω 1000 1500 IRGP30B120KD-E Fig.18 - Typical Diode Tj=125°C; I =25A (ohms) Fig.20 - Typical Diode =600V; V =15V; Tj=125° 7000 5 Ω 10 Ω 6500 22 Ω 51 Ω 6000 5500 5000 ...
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... IRGP30B120KD-E Fig.22 - Typical Capacitance =0V; f=1MHz GE 10000 1000 100 ( Fig.21 - Typ. Diode E Tj=125°C 2400 2200 2000 1800 1600 1400 1200 1000 800 ies C oes C res 60 80 100 vs. I rec F 5 Ω 10 Ω 22 Ω 51 Ω (A) Fig.23 - Typ. Gate Charge vs =25A; L=600μH ...
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... Fig.24 - Normalized Transient Thermal Impedance, Junction-to-Case =0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE 0.001 0.00001 0.00010 www.irf.com Notes: 1. Duty factor Peak T 0.00100 0.01000 t , Rectangular Pulse Duration (sec) 1 IRGP30B120KD thJC C 0.10000 1.00000 10.00000 9 ...
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... IRGP30B120KD Driver DUT 10 L VCC DUT 900V DUT diode clamp / DUT DUT / DRIVER VCC DUT 1000V VCC www.irf.com ...
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... I me (μS) www.irf.com 1.5 2.0 2 10% Peak - -20 -30 1.0 IRGP30B120KD-E 900 800 700 TEST CURRENT 600 500 90% test current 400 t r 300 10% test current 200 100 0 Eon Loss -100 4.0 4.1 4.2 4 (μs) C 1200 1000 V CE 800 I CE 600 ...
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... IRGP30B120KD-E TO-247AC package is not recommended for Surface Mount Application. EXAMPLE: T HIS IS AN IRGP30B120KD-E WIT EMBLY LOT CODE 5657 AS S EMBLED ON WW 35, 2000 EMBLY LINE "H" Note: "P" sembly line pos ition indicates "Lead-Free" IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel 838 4630 IR TAIWAN:16 Fl ...