IRGP30B120KD-EP International Rectifier, IRGP30B120KD-EP Datasheet - Page 7

• Manufacturer Part Number: IRGP30B120KD-EP
• Description: IGBT W/DIODE 1200V 60A TO247AD
• Manufacturer: International Rectifier
• Type: Ultrafastr

Specifications of IRGP30B120KD-EP

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 4V @ 15V, 60A
• Current - Collector (ic) (max): 60A
• Power - Max: 300W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads), TO-247AD
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 1.2kV
• Collector Current (dc) (max): 60A
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-247AD
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (min): -55C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Capacitance, Gate: 2200 pF
• Current, Collector: 60 A
• Energy Rating: 2559 μJ
• Polarity: N-Channel
• Power Dissipation: 300 W
• Resistance, Thermal, Junction To Case: 0.42 °C/W
• Speed, Switching: 5 to 40 kHz
• Voltage, Collector To Emitter Shorted: 1200 V
• Voltage, Collector To Emitter, Saturation: 3.43 V
• Transistor Type: IGBT
• Dc Collector Current: 60A
• Collector Emitter Voltage Vces: 1.2kV
• Power Dissipation Pd: 300W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -55°C To +150°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRGP30B120KD-EP

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45
40
35
30
25
20
15
10
45
40
35
30
25
20
15
10
5
0
5
0
0
0
Fig.19 - Typical Diode I
Fig.17 - Typical Diode I
Rg=10 Ω
Rg=22 Ω
Rg=51 Ω
Rg=5 Ω
10
V
I
CC
F
Rg=51 Ω
=25A; Tj=125°C
500
=600V; V
20
Tj=125°C
dI
F
I
/ dt (A/μs)
Rg=5 Ω
F
30
(A)
GE
Rg=22 Ω
=15V
RR
1000
40
RR
vs dI
Rg=10 Ω
vs I
F
50
/dt
F
1500
60
7000
6500
6000
5500
5000
4500
4000
3500
3000
2500
45
40
35
30
25
20
15
10
5
0
IRGP30B120KD-E
Fig.18 - Typical Diode I
0
0
V
5
CC
Fig.20 - Typical Diode Q
10 15 20 25 30 35 40 45 50 55
51 Ω
=600V; V
Tj=125°C; I
500
Rg (ohms)
22 Ω
dI
GE
F
=15V; Tj=125°C
/ dt (A/μs)
F
=25A
10 Ω
1000
RR
RR
vs Rg
5 Ω
30A
25A
20A
50A
40A
1500
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