IRGP30B120KD-EP International Rectifier, IRGP30B120KD-EP Datasheet - Page 4

IGBT W/DIODE 1200V 60A TO247AD

IRGP30B120KD-EP

Manufacturer Part Number
IRGP30B120KD-EP
Description
IGBT W/DIODE 1200V 60A TO247AD
Manufacturer
International Rectifier
Type
Ultrafastr

Specifications of IRGP30B120KD-EP

Igbt Type
NPT
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
4V @ 15V, 60A
Current - Collector (ic) (max)
60A
Power - Max
300W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads), TO-247AD
Channel Type
N
Configuration
Single
Collector-emitter Voltage
1.2kV
Collector Current (dc) (max)
60A
Gate To Emitter Voltage (max)
±20V
Package Type
TO-247AD
Pin Count
3 +Tab
Mounting
Through Hole
Operating Temperature (min)
-55C
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Capacitance, Gate
2200 pF
Current, Collector
60 A
Energy Rating
2559 μJ
Polarity
N-Channel
Power Dissipation
300 W
Resistance, Thermal, Junction To Case
0.42 °C/W
Speed, Switching
5 to 40 kHz
Voltage, Collector To Emitter Shorted
1200 V
Voltage, Collector To Emitter, Saturation
3.43 V
Transistor Type
IGBT
Dc Collector Current
60A
Collector Emitter Voltage Vces
1.2kV
Power Dissipation Pd
300W
Collector Emitter Voltage V(br)ceo
1.2kV
Operating Temperature Range
-55°C To +150°C
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRGP30B120KD-EP

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRGP30B120KD-EP
Manufacturer:
SEMTECH
Quantity:
9 279
Company:
Part Number:
IRGP30B120KD-EP
Quantity:
9 000
IRGP30B120KD-EP
4
60
55
50
45
40
35
30
25
20
15
10
60
55
50
45
40
35
30
25
20
15
10
5
0
5
0
0
0
V
V
V
V
V
Fig.5 - Typical IGBT Output
Fig.7 - Typical IGBT Output
GE
GE
GE
GE
GE
V
V
V
V
V
GE
GE
GE
GE
GE
= 18V
= 15V
= 12V
= 10V
= 8V
1
1
Tj= -40°C; tp=300µs
Tj=125°C; tp=300µs
= 18V
= 15V
= 12V
= 10V
= 8V
Characteristics
Characteristics
2
2
V
V
CE
CE
3
3
(V)
(V)
4
4
5
5
6
6
60
55
50
45
40
35
30
25
20
15
10
60
55
50
45
40
35
30
25
20
15
10
5
0
5
0
0
0
Fig.8 - Typical Diode Forward
Fig.6 - Typical IGBT Output
V
V
V
V
V
- 40°C
125°C
GE
GE
GE
GE
GE
25°C
1
Tj=25°C; tp=300µs
= 18V
= 15V
= 12V
= 10V
= 8V
Characteristics
Characteristic
1
tp=300µs
2
V
V
CE
F
2
3
(V)
(V)
4
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3
5
4
6

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