IXGK400N30A3 IXYS, IXGK400N30A3 Datasheet

no-image

IXGK400N30A3

Manufacturer Part Number
IXGK400N30A3
Description
IGBT 400A 300V TO-264AA
Manufacturer
IXYS
Series
GenX3™r
Datasheet

Specifications of IXGK400N30A3

Igbt Type
PT
Voltage - Collector Emitter Breakdown (max)
300V
Vce(on) (max) @ Vge, Ic
1.15V @ 15V, 100A
Current - Collector (ic) (max)
400A
Power - Max
1000W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-264AA
Vces, (v)
300
Ic25, Tc=25°c, Igbt, (a)
400
Ic90, Tc=90°c, Igbt, (a)
-
Ic110, Tc=110°c, Igbt, (a)
200
Vce(sat), Max, Tj=25°c, Igbt, (v)
1.15
Tfi, Typ, Tj=25°c, Igbt, (ns)
-
Eoff, Typ, Tj=125°c, Igbt, (mj)
-
Rthjc, Max, Igbt, (°c/w)
0.125
If, Tj=110°c, Diode, (a)
-
Rthjc, Max, Diode, (ºc/w)
-
Package Style
TO-264
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Ultra-low Vsat PT IGBTs for
up to 10kHz switching
Symbol
V
V
V
V
I
I
I
I
SSOA
(RBSOA)
P
T
T
T
T
T
M
F
Weight
Symbol
(T
BV
V
I
I
V
GenX3
C25
C110
LRMS
CM
CES
GES
© 2008 IXYS CORPORATION, All rights reserved
J
JM
stg
L
SOLD
C
CES
CGR
GES
GEM
C
GE(th)
CE(sat)
d
J
CES
= 25°C, unless otherwise specified)
TM
Continuous
Transient
T
T
Terminal Current Limit
T
V
Clamped inductive load
T
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10
Mounting torque ( IXGK )
Mounting force ( IXGX )
TO-264
PLUS247
I
I
V
V
V
I
Test Conditions
T
T
Test Conditions
I
C
C
C
C
C
C
C
C
J
J
GE
CE
GE
CE
300V IGBT
= 25°C to 150°C, R
= 25°C to 150°C
= 25°C
= 110°C
= 25°C, 1ms
= 15V, T
= 25°C
= 1mA, V
= 4mA, V
= V
= 0V
= 0V, V
= 100A, V
= 400A
CES
VJ
GE
GE
CE
= 125°C, R
= ±20V
GE
= 0V
= V
= 15V, Note 1
GE
GE
= 1MΩ
G
= 1Ω
T
J
= 125°C
IXGK400N30A3
IXGX400N30A3
20..120/4.5..27
@ 0.8 • V
-55 ... +150
-55 ... +150
Characteristic Values
300
Min.
3.0
Maximum Ratings
I
CM
1.13/10
= 400
1000
300
300
±20
±30
400
200
150
300
400
260
CES
75
10
1.70
Typ.
6
±400 nA
1.15
Nm/lb.in.
Max.
5.0
50 μA
2 mA
N/lb.
°C
°C
°C
°C
°C
W
V
V
V
V
A
A
A
A
V
V
V
A
V
g
g
V
I
V
TO-264
PLUS247
G = Gate
C = Collector
Features
Advantages
Applications
C25
Optimized for low switching losses
Square RBSOA
High avalanche capability
International standard packages
High power density
Low gate drive requirement
Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
Inrush Current Protection Circuits
CES
CE(sat)
G
G
TM
C
C
≤ ≤ ≤ ≤ ≤ 1.15V
= 300V
= 400A
E
E
E
E
TAB = Collector
DS99584A(11/08)
(TAB)
(TAB)
= Emitter

Related parts for IXGK400N30A3

IXGK400N30A3 Summary of contents

Page 1

... CES CE CES 0V ±20V GES 100A 15V, Note 1 CE(sat 400A C © 2008 IXYS CORPORATION, All rights reserved IXGK400N30A3 IXGX400N30A3 Maximum Ratings 300 = 1MΩ 300 GE ±20 ±30 400 200 75 400 = 1Ω 400 0.8 • V CES 1000 -55 ... +150 150 -55 ... +150 300 260 1.13/10 20..120/4.5..27 ...

Page 2

... CES 185 45 45 210 107 47 53 240 315 0.15 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXGK400N30A3 IXGX400N30A3 TO-264 (IXGK) Outline Max 0.125 °C/W °C/W PLUS247 (IXGX) Outline TM Terminals Gate 2 - Drain (Collector Source (Emitter) Dim ...

Page 3

... C 1.6 1.4 1.2 1 100A C 0.8 75 100 125 150 350 300 250 25ºC 200 150 100 5.6 6.0 6.4 6.8 IXGK400N30A3 IXGX400N30A3 Fig. 2. Output Characteristics @ 125º 0.0 0.2 0.4 0.6 0.8 1 Volts CE Fig. 4. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage I = 300A C 200A 100A 5 ...

Page 4

... IXYS reserves the right to change limits, test conditions, and dimensions. 100,000 10,000 1,000 100 400 450 500 550 600 1.00 0.10 0.01 0.00 175 200 225 250 275 300 IXGK400N30A3 IXGX400N30A3 Fig. 8. Capacitance MHz Volts CE Fig. 10. Maximum Transient Thermal Impedance 0.00001 0.0001 0.001 0.01 ...

Page 5

... GE 900 800 250 700 600 200 500 150 400 300 100 200 100 100 IXGK400N30A3 IXGX400N30A3 Fig. 12. Resistive Turn-on Rise Time vs. Collector Current T = 125º 1Ω 15V 240V 25ºC J 120 140 160 180 200 220 ...

Related keywords