IXGK400N30A3 IXYS, IXGK400N30A3 Datasheet - Page 3

• Manufacturer Part Number: IXGK400N30A3
• Description: IGBT 400A 300V TO-264AA
• Manufacturer: IXYS
• Series: GenX3™r

Specifications of IXGK400N30A3

• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 300V
• Vce(on) (max) @ Vge, Ic: 1.15V @ 15V, 100A
• Current - Collector (ic) (max): 400A
• Power - Max: 1000W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-264AA
• Vces, (v): 300
• Ic25, Tc=25°c, Igbt, (a): 400
• Ic90, Tc=90°c, Igbt, (a): -
• Ic110, Tc=110°c, Igbt, (a): 200
• Vce(sat), Max, Tj=25°c, Igbt, (v): 1.15
• Tfi, Typ, Tj=25°c, Igbt, (ns): -
• Eoff, Typ, Tj=125°c, Igbt, (mj): -
• Rthjc, Max, Igbt, (°c/w): 0.125
• If, Tj=110°c, Diode, (a): -
• Rthjc, Max, Diode, (ºc/w): -
• Package Style: TO-264
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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1.3
1.2
1.1
1.0
0.9
0.8
0.7
350
300
250
200
150
100
280
240
200
160
120
50
80
40
0
0
-50
0.0
4.0
V
0.2
GE
-25
= 15V
4.4
0.4
Fig. 3. Dependence of V
Fig. 1. Output Characteristics
0.6
0
Fig. 5. Input Admittance
4.8
Junction Temperature
T
0.8
J
- Degrees Centigrade
25
V
1.0
V
V
GE
5.2
GE
@ 25ºC
CE
T
J
- Volts
= 15V
50
1.2
- Volts
= 125ºC
11V
- 40ºC
9V
25ºC
5.6
1.4
75
1.6
7V
5V
I
I
I
CE(sat)
C
C
C
6.0
= 300A
= 200A
= 100A
100
1.8
on
2.0
6.4
125
2.2
2.4
150
6.8
350
300
250
200
150
100
300
250
200
150
100
3.0
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
50
50
0
0
0.0
0
5
20
0.2
6
Fig. 4. Collector-to-Emitter Voltage
40
7
Fig. 2. Output Characteristics
0.4
60
vs. Gate-to-Emitter Voltage
Fig. 6. Transconductance
I
C
80
8
= 300A
0.6
200A
100A
100 120 140 160 180 200 220 240 260
I
C
V
V
9
- Amperes
CE
GE
@ 125ºC
0.8
- Volts
- Volts
10
1.0
V
IXGK400N30A3
IXGX400N30A3
11
T
GE
J
= - 40ºC
= 15V
1.2
11V
125ºC
9V
25ºC
12
T
1.4
J
13
= 25ºC
7V
5V
1.6
14
1.8
15