IXGK400N30A3 IXYS, IXGK400N30A3 Datasheet - Page 4

• Manufacturer Part Number: IXGK400N30A3
• Description: IGBT 400A 300V TO-264AA
• Manufacturer: IXYS
• Series: GenX3™r

Specifications of IXGK400N30A3

• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 300V
• Vce(on) (max) @ Vge, Ic: 1.15V @ 15V, 100A
• Current - Collector (ic) (max): 400A
• Power - Max: 1000W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-264AA
• Vces, (v): 300
• Ic25, Tc=25°c, Igbt, (a): 400
• Ic90, Tc=90°c, Igbt, (a): -
• Ic110, Tc=110°c, Igbt, (a): 200
• Vce(sat), Max, Tj=25°c, Igbt, (v): 1.15
• Tfi, Typ, Tj=25°c, Igbt, (ns): -
• Eoff, Typ, Tj=125°c, Igbt, (mj): -
• Rthjc, Max, Igbt, (°c/w): 0.125
• If, Tj=110°c, Diode, (a): -
• Rthjc, Max, Diode, (ºc/w): -
• Package Style: TO-264
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
450
400
350
300
250
200
150
100
16
14
12
10
50
8
6
4
2
0
0
25
0
50
T
R
dV / dt < 10V / ns
Fig. 9. Reverse-Bias Safe Operating Area
50
J
G
V
I
I
C
G
= 125ºC
CE
= 1Ω
= 100A
= 10 mA
100
= 150V
75
150
100
Fig. 7. Gate Charge
200
Q
125
G
V
- NanoCoulombs
250
CE
150
- Volts
300 350
175
200
400
225
450
250
500
275
550
300
600
100,000
10,000
1,000
1.00
0.10
0.01
0.00
100
0.00001
0
f
= 1 MHz
Fig. 10. Maximum Transient Thermal
5
0.0001
10
0.001
Fig. 8. Capacitance
Pulse Width - Seconds
15
Impedance
V
CE
0.01
- Volts
20
IXGK400N30A3
IXGX400N30A3
25
0.1
30
IXYS REF: G_400N30A3(96)11-18-08-A
C ies
C oes
C res
1
35
10
40