GT60N322(Q) Toshiba, GT60N322(Q) Datasheet
GT60N322(Q)
Specifications of GT60N322(Q)
Related parts for GT60N322(Q)
GT60N322(Q) Summary of contents
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... Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). ...
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Electrical Characteristics Characteristics Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Rise time Turn-on time Switching time Fall time Turn-off time Diode forward voltage Reverse recovery time Note 1: Switching time measurement circuit and ...
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I – 120 10 Common emitter 15 100 Tc = -40° Collector-emitter voltage V CE (V) I – ...
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– 200 Common emitter 2.5 Ω 25°C 150 100 150 V 50 100 120 180 Gate charge Q G (nC) Switching ...
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Tc = 25° − − − 5 − max – Common emitter ...
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... The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • ...