GT60N322(Q) Toshiba, GT60N322(Q) Datasheet - Page 3

• Manufacturer Part Number: GT60N322(Q)
• Description: IGBT 1000V 57A TO-3P LH
• Manufacturer: Toshiba

Specifications of GT60N322(Q)

• Voltage - Collector Emitter Breakdown (max): 1000V
• Vce(on) (max) @ Vge, Ic: 2.9V @ 15V, 60A
• Current - Collector (ic) (max): 57A
• Power - Max: 200W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -

120
100
120
100
80
60
40
20
80
60
40
20
0
0
4
3
2
1
0
−60
0
0
Common
emitter
Tc = -40°C
Common
emitter
Tc = 125°C
Common
emitter
V GE = 15 V
Collector-emitter voltage V CE (V)
Collector-emitter voltage V CE (V)
1
1
−20
Case temperature Tc (°C)
2
2
20
V
20
CE (sat)
I
I
C
C
– V
– V
3
3
10
20
15
CE
CE
– Tc
60
I C = 80 A
4
4
60
30
10
10
15
100
V GE = 6 V
V GE = 6 V
5
5
8
7
8
7
140
6
6
3
120
100
120
100
80
60
40
20
80
60
40
20
0
0
0
0
Common
emitter
Tc = 25°C
Common
emitter
V CE = 5V
Collector-emitter voltage V CE (V)
1
Gate-emitter voltage V GE (V)
2
2
Tc = 125 °C
4
I
I
C
C
20
– V
– V
3
25
CE
GE
10
6
15
4
40
V GE = 6 V
8
5
GT60N322
8
7
2006-11-01
10
6