IRF7103TRPBF International Rectifier, IRF7103TRPBF Datasheet - Page 2
IRF7103TRPBF
Manufacturer Part Number
IRF7103TRPBF
Description
MOSFET N-CH 50V 3A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Type
Power MOSFETr
Specifications of IRF7103TRPBF
Fet Type
2 N-Channel (Dual)
Fet Feature
Standard
Rds On (max) @ Id, Vgs
130 mOhm @ 3A, 10V
Drain To Source Voltage (vdss)
50V
Current - Continuous Drain (id) @ 25° C
3A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
30nC @ 10V
Input Capacitance (ciss) @ Vds
290pF @ 25V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Channel Type
N
Number Of Elements
2
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.13Ohm
Drain-source On-volt
50V
Gate-source Voltage (max)
±20V
Continuous Drain Current
3A
Power Dissipation
2W
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
8
Package Type
SOIC
Configuration
Dual
Transistor Polarity
Dual N-Channel
Resistance Drain-source Rds (on)
200 mOhms
Drain-source Breakdown Voltage
50 V
Gate-source Breakdown Voltage
20 V
Mounting Style
SMD/SMT
Gate Charge Qg
12 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRF7103PBFTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRF7103TRPBF
Manufacturer:
IR
Quantity:
24 000
Company:
Part Number:
IRF7103TRPBF
Manufacturer:
International Rectifier
Quantity:
215 449
Part Number:
IRF7103TRPBF
Manufacturer:
IR
Quantity:
20 000
Electrical Characteristics @ T
IRF7103QPbF
Source-Drain Ratings and Characteristics
Notes:
V
∆V
V
g
Q
Q
Q
t
t
t
t
C
C
C
I
I
V
t
Q
R
I
d(on)
r
d(off)
f
SM
DSS
S
rr
fs
(BR)DSS
GS(th)
2
iss
oss
rss
SD
g
gs
gd
DS(on)
rr
(BR)DSS
Repetitive rating; pulse width limited by
Pulse width ≤ 400µs; duty cycle ≤
max. junction temperature.
Surface mounted on 1 in square Cu board
/∆T
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Static Drain-to-Source On-Resistance
Drain-to-Source Leakage Current
Parameter
Parameter
J
= 25°C (unless otherwise specified)
Min. Typ. Max. Units
I
Limited by T
Min. Typ. Max. Units
T
––– 0.057 –––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
R
–––
–––
–––
Starting T
1.0
3.4
SD
50
avalanche performance.
J
G
≤ 175°C
≤ 2.0A, di/dt ≤ 155A/µs, V
= 25Ω, I
–––
–––
–––
–––
–––
–––
–––
–––
––– -100
255
–––
1.2
2.8
5.1
1.7
2.3
10
15
69
29
35
45
J
= 25°C, L = 4.9mH
AS
Jmax
–––
130
–––
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
200
3.0
2.0
1.2
25
15
53
3.0
67
12
= 3.0A. (See Figure 12).
, see Fig.16c, 16d, 19, 20 for typical repetitive
V/°C
mΩ
nC
pF
nC
ns
V
V
S
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
I
V
V
V
I
R
R
V
V
ƒ = 1.0MHz
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs
D
D
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
J
J
G
D
DD
= 2.0A
= 1.0A
= 25°C, I
= 25°C, I
= 6.0Ω
= 25Ω
= 0V, I
= 10V, I
= 4.5V, I
= V
= 15V, I
= 40V, V
= 40V, V
= 20V
= -20V
= 40V
= 10V
= 25V
= 0V
= 25V
≤ V
GS
Conditions
(BR)DSS
, I
D
S
F
D
D
D
Conditions
= 250µA
D
GS
GS
= 1.5A, V
= 1.5A
= 3.0A
= 250µA
= 3.0A
= 1.5A
,
= 0V
= 0V, T
D
www.irf.com
= 1mA
GS
J
= 55°C
= 0V
G
D
S