IRF7331TRPBF International Rectifier, IRF7331TRPBF Datasheet - Page 4

• Manufacturer Part Number: IRF7331TRPBF
• Description: MOSFET 2N-CH 20V 7A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7331TRPBF

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 30 mOhm @ 7A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 7A
• Vgs(th) (max) @ Id: 1.2V @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1340pF @ 16V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual
• Transistor Polarity: Dual N-Channel
• Resistance Drain-source Rds (on): 30 mOhms
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: 12 V
• Continuous Drain Current: 7 A
• Power Dissipation: 2 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 13 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7331PBFTR; IRF7331TRPBF; IRF7331TRPBFTR

4
2400
2000
1600
1200
100
800
400
0.1
10
1
0
0.2
Fig 5. Typical Capacitance Vs.
Fig 7. Typical Source-Drain Diode
1
Drain-to-Source Voltage
T = 150 C
V
J
SD
Coss
V DS , Drain-to-Source Voltage (V)
0.4
Ciss
Crss
,Source-to-Drain Voltage (V)
Forward Voltage
°
V GS = 0V,
C iss = C gs + C gd , C ds
C rss = C gd
C oss = C ds + C gd
0.6
10
T = 25 C
J
0.8
f = 1 MHZ
°
V
1.0
GS
SHORTED
= 0 V
1.2
100
100
0.1
Fig 8. Maximum Safe Operating Area
10
8
6
4
2
0
1
0
0.1
Fig 6. Typical Gate Charge Vs.
I =
D
Tc = 25°C
Tj = 150°C
Single Pulse
7.0A
Gate-to-Source Voltage
V DS , Drain-toSource Voltage (V)
Q , Total Gate Charge (nC)
4
G
OPERATION IN THIS AREA
LIMITED BY R DS (on)
1
V
8
DS
= 10V
12
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10
16
100µsec
1msec
10msec
100
20