IRF7331TRPBF International Rectifier, IRF7331TRPBF Datasheet - Page 6

• Manufacturer Part Number: IRF7331TRPBF
• Description: MOSFET 2N-CH 20V 7A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7331TRPBF

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 30 mOhm @ 7A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 7A
• Vgs(th) (max) @ Id: 1.2V @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1340pF @ 16V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual
• Transistor Polarity: Dual N-Channel
• Resistance Drain-source Rds (on): 30 mOhms
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: 12 V
• Continuous Drain Current: 7 A
• Power Dissipation: 2 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 13 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7331PBFTR; IRF7331TRPBF; IRF7331TRPBFTR

6
0.05
0.04
0.03
0.02
0.01
V
Fig 12. Typical On-Resistance Vs.
Fig 14a. Basic Gate Charge Waveform
GS
2.0
V
G
V GS, Gate -to -Source Voltage (V)
Q
GS
Gate Voltage
4.0
Charge
Q
Q
GD
G
I D = 7.0A
6.0
8.0
0.12
0.10
0.08
0.06
0.04
0.02
0.00
Fig 13. Typical On-Resistance Vs.
Fig 14b. Gate Charge Test Circuit
0
12V
V
GS
Same Type as D.U.T.
Current Regulator
5
.2µF
Drain Current
I D , Drain Current (A)
50KΩ
3mA
10
Current Sampling Resistors
.3µF
V GS = 2.5V
I
G
15
V GS = 4.5V
D.U.T.
www.irf.com
20
I
D
+
-
25
V
DS
30