IRF7331TRPBF International Rectifier, IRF7331TRPBF Datasheet

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... Description ® These N-Channel HEXFET power MOSFET International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The SO-8 has been modified through a customized ...

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Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V Breakdown Voltage Temp. Coefficient /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage ...

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VGS TOP 7.5V 4.5V 3.5V 3.0V 2.5V 2.0V 100 1.75V BOTTOM 1.5V 10 1.50V 1 20µs PULSE WIDTH 0.1 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 100 ...

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0V MHZ C iss = rss = C gd 2000 C oss = 1600 Ciss 1200 800 400 Coss ...

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T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 100 D = 0.50 0.20 10 0.10 0.05 0.02 0.01 1 SINGLE PULSE (THERMAL RESPONSE) 0.1 ...

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7.0A 0.02 0.01 2.0 4.0 V GS, Gate -to -Source Voltage (V) Fig 12. Typical On-Resistance Vs. Gate Voltage Charge Fig 14a. Basic Gate ...

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Temperature ( °C ) Fig 15. Typical Vgs(th) Vs. Junction Temperature www.irf.com 250µ ...

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SO-8 Package Outline Dimensions are shown in milimeters (inches & " YÃi !$Ãb dà IPU@T) ÃÃ9DH@ITDPIDIBÃÉÃUPG@S6I8DIBÃQ@SÃ6TH@Ã` #$H ((# !ÃÃ8PIUSPGGDIBÃ9DH@ITDPI)ÃHDGGDH@U@S "ÃÃ9DH@ITDPITÃ6S@ÃTCPXIÃDIÃHDGGDH@U@STÃbDI8C@Td #ÃÃPVUGDI@Ã8PIAPSHTÃUPÃE@9@8ÃPVUGDI@ÃHT !66 $ÃÃÃ9DH@ITDPIÃ9P@TÃIPUÃDI8GV9@ÃHPG9ÃQSPUSVTDPIT ...

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SO-8 Tape and Reel 8.1 ( .318 ) 7.9 ( .312 ) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ...