IRF7756TRPBF International Rectifier, IRF7756TRPBF Datasheet

IRF7756TRPBF

Manufacturer Part Number

IRF7756TRPBF

Description

MOSFET P-CH DUAL 12V 4.3A 8TSSOP

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheet

1.IRF7756TRPBF.pdf (9 pages)

Specifications of IRF7756TRPBF

Fet Type

2 P-Channel (Dual)

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

40 mOhm @ 4.3A, 4.5V

Drain To Source Voltage (vdss)

12V

Current - Continuous Drain (id) @ 25° C

4.3A

Vgs(th) (max) @ Id

900mV @ 250µA

Gate Charge (qg) @ Vgs

18nC @ 4.5V

Input Capacitance (ciss) @ Vds

1400pF @ 10V

Power - Max

Mounting Type

Surface Mount

Package / Case

8-TSSOP

Configuration

Dual

Transistor Polarity

Dual P-Channel

Drain-source Breakdown Voltage

- 12 V

Gate-source Breakdown Voltage

8 V

Continuous Drain Current

- 3.4 A

Power Dissipation

1 W

Mounting Style

SMD/SMT

Gate Charge Qg

12 nC

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

IRF7756TRPBF
IRF7756TRPBFTR

Current page: 1 of 9
Download datasheet (237Kb)

Thermal Resistance

HEXFET

utilize advanced processing techniques to achieve ex-

tremely low on-resistance per silicon area. This benefit,

combined with the ruggedized device design, that Inter-

national Rectifier is well known for,

with an extremely efficient and reliable device for

battery and load management.

The TSSOP-8 package has 45% less footprint area than

the standard SO-8. This makes the TSSOP-8 an ideal

device for applications where printed circuit board space

is at a premium. The low profile (<1.1mm) allows it to fit

easily into extremely thin environments such as portable

electronics and PCMCIA cards.

Absolute Maximum Ratings

Description

www.irf.com

θJA

@ T

Dual P-Channel MOSFET

, T

Ultra Low On-Resistance

Very Small SOIC Package

Low Profile (< 1.2mm)

Available in Tape & Reel

Lead-Free

STG

= 25°C

= 70°C

= 25°C

= 70°C

Power MOSFETs from International Rectifier

Gate-to-Source Voltage

Maximum Junction-to-Ambient

Linear Derating Factor

Drain-Source Voltage

Continuous Drain Current, V

Pulsed Drain Current

Maximum Power Dissipation

Junction and Storage Temperature Range

Parameter

provides thedesigner

@ -4.5V

!Ã2ÃT

"Ã2ÃT

Ã2Ã9

Ã2ÃB

-12V

DSS

HEXFET

'Ã2Ã9!

$Ã2ÃB!

&Ã2ÃT!

%Ã2ÃT!

0.040@V

0.058@V

0.087@V

IRF7756PbF

-55 to +150

Max.

125

DS(on)

Max.

0.64

-4.3

-3.5

8.0

-12

-17

1.0

±8.0

Power MOSFET

max

= -4.5V

= -2.5V

= -1.8V

TSSOP-8

mW/°C

4.3A

3.4A

2.2A

Units

°C/W

°C

Related parts for IRF7756TRPBF

IRF7756TRPBF Summary of contents

Page 1

... Lead-Free l Description ® HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve ex- tremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that Inter- provides thedesigner national Rectifier is well known for, with an extremely efficient and reliable device for battery and load management ...

Page 2

IRF7756PbF Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V Breakdown Voltage Temp. Coefficient /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward ...

Page 3

VGS TOP -7.5V -4.5V -2.5V -1.8V -1.5V -1.2V 10 -1.0V BOTTOM -0.8V 1 -0.8V 0.1 20µs PULSE WIDTH 0.01 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 100 10 ...

Page 4

IRF7756PbF 2400 0V MHZ C iss = rss = C gd 2000 C oss = 1600 Ciss 1200 800 Coss ...

Page 5

T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 1000 100 D = 0.50 0.20 0.10 10 0.05 0.02 0.01 1 SINGLE PULSE (THERMAL ...

Page 6

IRF7756PbF 0.07 0.06 0.05 0. -4.3A 0.03 0.02 1.0 2.0 3.0 -V GS, Gate -to -Source Voltage (V) Fig 11. Typical On-Resistance Vs. Gate Voltage Charge Fig 13a. Basic ...

Page 7

Temperature ( °C ) Fig 14. Threshold Voltage Vs. Tempera- ture www.irf.com -250µ 0.001 75 100 125 ...

Page 8

IRF7756PbF TSSOP8 Package Outline Dimensions are shown in milimeters (inches @! @ DI9@Y 6SF $ r 7 "Y ppp r 'YÃ iii hhh 8 'ÃTVSA G@69Ã6TTDB H@ UT ...

Page 9

G@) UCDTÃDTÃ6IÃDSA''$! 7A GPUÃ8P9@ TSSOP-8 Tape and Reel Information A@@9Ã9DS@8UDPI 'Ã€€ IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 www.irf.com 6SUÃIVH7@S 96U@Ã8P9@Ã`XX 6TT@H7G`ÃTDU@Ã8P9@ Ã2ÃGrhqA…rrÃvqvph‡‚… Ã "Å %Ã€€ IPU@T) ÃÃU6Q@ÃÉÃS@@GÃPVUGDI@Ã8PIAPSHTÃUPÃ@D6#' ÃÉÃ@D6$# Data ...

Related keywords

irf7754
IRF7756TRPBF datasheet
IRF7756TRPBF data sheet
IRF7756TRPBF pdf datasheet
IRF7756TRPBF component
IRF7756TRPBF part
IRF7756TRPBF distributor
IRF7756TRPBF RoHS
IRF7756TRPBF datasheet download