IRF7756TRPBF International Rectifier, IRF7756TRPBF Datasheet - Page 3

• Manufacturer Part Number: IRF7756TRPBF
• Description: MOSFET P-CH DUAL 12V 4.3A 8TSSOP
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7756TRPBF

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 40 mOhm @ 4.3A, 4.5V
• Drain To Source Voltage (vdss): 12V
• Current - Continuous Drain (id) @ 25° C: 4.3A
• Vgs(th) (max) @ Id: 900mV @ 250µA
• Gate Charge (qg) @ Vgs: 18nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1400pF @ 10V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: 8-TSSOP
• Configuration: Dual
• Transistor Polarity: Dual P-Channel
• Drain-source Breakdown Voltage: - 12 V
• Gate-source Breakdown Voltage: 8 V
• Continuous Drain Current: - 3.4 A
• Power Dissipation: 1 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 12 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7756TRPBF; IRF7756TRPBFTR

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0.01
100
0.1
10
100
1
Fig 1. Typical Output Characteristics
10
Fig 3. Typical Transfer Characteristics
0.1
1
0
TOP
BOTTOM
0.5
-V
T J = 150°C
DS
VGS
-7.5V
-4.5V
-2.5V
-1.8V
-1.5V
-1.2V
-1.0V
-0.8V
-V GS , Gate-to-Source Voltage (V)
, Drain-to-Source Voltage (V)
1.0
T J = 25°C
1
20µs PULSE WIDTH
T = 25 C
-0.8V
V DS = -10V
20µs PULSE WIDTH
J
1.5
°
10
2.0
100
0.1
2.0
1.5
1.0
0.5
0.0
10
Fig 4. Normalized On-Resistance
1
Fig 2. Typical Output Characteristics
0.1
-60 -40 -20
TOP
BOTTOM
I =
D
-V
-4.3A
DS
VGS
-7.5V
-4.5V
-2.5V
-1.8V
-1.5V
-1.2V
-1.0V
-0.8V
T , Junction Temperature ( C)
Vs. Temperature
J
, Drain-to-Source Voltage (V)
0
IRF7756PbF
20 40 60 80 100 120 140 160
1
20µs PULSE WIDTH
T = 150 C
-0.8V
J
°
V
°
GS
=
-4.5V
3
10