IRF7304 International Rectifier, IRF7304 Datasheet - Page 2

• Manufacturer Part Number: IRF7304
• Description: MOSFET 2P-CH 20V 4.3A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7304

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 90 mOhm @ 2.2A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 4.3A
• Vgs(th) (max) @ Id: 700mV @ 250µA
• Gate Charge (qg) @ Vgs: 22nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 610pF @ 15V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF7304

Electrical Characteristics @ T
Source-Drain Ratings and Characteristics
Notes:
IRF7304
V
V
g
I
Q
Q
Q
t
t
t
t
C
C
C
I
I
V
t
Q
t
R
I
L
L
GSS
d(on)
d(off)
f
SM
rr
on
DSS
r
S
V
fs
D
S
(BR)DSS
GS(th)
g
gd
iss
oss
rss
SD
DS(ON)
gs
rr
Repetitive rating; pulse width limited by
(BR)DSS
I
max. junction temperature. ( See fig. 11 )
T
SD
J
150°C
-2.2A, di/dt
/ T
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Static Drain-to-Source On-Resistance
Drain-to-Source Leakage Current
Internal Drain Inductance
Internal Source Inductance
50A/µs, V
Parameter
Parameter
DD
V
(BR)DSS
J
= 25°C (unless otherwise specified)
,
-0.70 –––
Pulse width
Min. Typ. Max. Units
Min. Typ. Max. Units
–––
––– -0.012 –––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
-20
4.0
–––
–––
–––
Intrinsic turn-on time is negligible (turn-on is dominated by L
–––
–––
–––
–––
––– -100
–––
–––
310
170
––– 0.090
––– 0.140
–––
–––
4.0
610
–––
–––
8.4
6.0
–––
26
51
33
56
71
–––
–––
–––
–––
-1.0
100
–––
–––
–––
–––
–––
–––
–––
–––
-1.0
-2.5
110
-25
3.3
9.0
-17
300µs; duty cycle 2%.
84
22
V/°C
nH
µA
nA
ns
µC
nC
pF
ns
A
V
V
S
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
I
V
V
I
R
R
Between lead tip
and center of die contact
V
V
ƒ = 1.0MHz, See Fig. 5
MOSFET symbol
showing the
p-n junction diode.
T
V
V
integral reverse
T
di/dt = 100A/µs
D
D
J
J
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
G
D
GS
DS
= -2.2A
= -2.2A
= 25°C, I
= 25°C, I
= 4.5
= 6.0
= V
= -16V, V
= 0V, ID = -250µA
= -4.5V, I
= -2.7V, I
= -16V, I
= -16V, V
= -16V
= -4.5V, See Fig. 6 and 12
= -15V
= -12V
= 12V
= 0V
= -10V
GS
, I
See Fig. 10
S
F
D
Conditions
D
= -2.2A
= -1.8A, V
Conditions
D
D
GS
= -250µA
GS
= -2.2A
= -2.2A
= -1.8A
= 0V, T
= 0V
D
= -1mA
GS
G
J
= 125°C
= 0V
G
S
+L
D
S
D
S
D
)