IRF7304 International Rectifier, IRF7304 Datasheet - Page 4

• Manufacturer Part Number: IRF7304
• Description: MOSFET 2P-CH 20V 4.3A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7304

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 90 mOhm @ 2.2A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 4.3A
• Vgs(th) (max) @ Id: 700mV @ 250µA
• Gate Charge (qg) @ Vgs: 22nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 610pF @ 15V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF7304

IRF7304
1 5 0 0
1 0 0 0
1 0 0
5 0 0
0 . 1
1 0
1
0
Fig 7. Typical Source-Drain Diode
0 . 3
1
Fig 5. Typical Capacitance Vs.
-V
-V
Drain-to-Source Voltage
S D
D S
C
C
C
Forward Voltage
0 . 6
is s
o s s
V
C
C
C
r ss
, Source-to-Drain Voltage (V )
, D rain-to-S ource V oltage (V)
T = 1 50 °C
G S
iss
rs s
oss
J
= 0V,
= C
= C
= C
gs
gd
ds
+ C
+ C
0 . 9
1 0
gd
gd
f = 1 MH z
T = 2 5°C
, C
J
d s
1 . 2
SH O R TE D
V
G S
= 0 V
1 0 0
1 . 5
A
A
100
1 0
10
8
6
4
2
0
Fig 8. Maximum Safe Operating Area
1
0
1
I
V
D
T
T
Single Pulse
Fig 6. Typical Gate Charge Vs.
DS
A
J
= -2 .2A
= 25 C
= 150 C
= -1 6V
OPERATION IN THIS AREA LIMITED
-V
Gate-to-Source Voltage
Q , Total Gate Charge (nC )
DS
5
°
°
G
, Drain-to-Source Voltage (V)
1 0
BY R
10
DS(on)
FO R TES T C IR C U IT
1 5
SEE FIG U R E 1 2
1ms
10ms
2 0
2 5
100
A