IRF7506TR International Rectifier, IRF7506TR Datasheet

IRF7506TR

Manufacturer Part Number

IRF7506TR

Description

MOSFET 2P-CH 30V 1.7A MICRO8

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheet

1.IRF7506TR.pdf (8 pages)

Specifications of IRF7506TR

Fet Type

2 P-Channel (Dual)

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

270 mOhm @ 1.2A, 10V

Drain To Source Voltage (vdss)

30V

Current - Continuous Drain (id) @ 25° C

1.7A

Vgs(th) (max) @ Id

1V @ 250µA

Gate Charge (qg) @ Vgs

11nC @ 10V

Input Capacitance (ciss) @ Vds

180pF @ 25V

Power - Max

1.25W

Mounting Type

Surface Mount

Package / Case

Micro8™

Lead Free Status / RoHS Status

Contains lead / RoHS non-compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

IRF7506TR

Quantity:

7 720

Company:

Meier Automation Equipment Co., Limited

Part Number:

IRF7506TR

Manufacturer:

Quantity:

20 000

Company:

Meier Automation Equipment Co., Limited

Part Number:

IRF7506TRPBF

Manufacturer:

Quantity:

20 000

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Description

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve

extremely low

benefit, combined with the fast switching speed and

ruggedized device design that HEXFET Power MOSFETs

are well known for, provides the designer with an extremely

efficient and reliable device for use in a wide variety of

applications.

The new Micro8 package, with half the footprint area of the

standard SO-8, provides the smallest footprint available in

an SOIC outline. This makes the Micro8 an ideal device

for applications where printed circuit board space is at a

premium. The low profile (<1.1mm) of the Micro8 will

allow it to fit easily into extremely thin application

environments such as portable electronics and PCMCIA

cards.

Absolute Maximum Ratings

Thermal Resistance Ratings

dv/dt

All Micro8 Data Sheets reflect improved Thermal Resistance, Power and Current -Handling Ratings- effective

only for product marked with Date Code 505 or later .

@ T

Generation V Technology

Ultra Low On-Resistance

Dual P-Channel MOSFET

Very Small SOIC Package

Low Profile (<1.1mm)

Available in Tape & Reel

Fast Switching

STG

= 25°C

= 70°C

= 25°C

on-resistance per silicon area.

Continuous Drain Current, V

Pulsed Drain Current

Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Peak Diode Recovery dv/dt

Junction and Storage Temperature Range

Parameter

Maximum Junction-to-Ambient

Parameter

@ -10V

This

G 2

G 1

S 2

S 1

T o p V iew

Typ.

–––

HEXFET

-55 to + 150

Max.

1.25

-1.7

-1.4

-9.6

± 20

MICRO8

5.0

IRF7506

Max.

Power MOSFET

100

DS(on)

DSS

PD - 9.1268F

= -30V

= 0.27

Units

mW/°C

Units

V/ns

°C/W

°C

8/25/97

Related parts for IRF7506TR

IRF7506TR Summary of contents

Page 1

... Very Small SOIC Package Low Profile (<1.1mm) Available in Tape & Reel Fast Switching Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs ...

Page 2

IRF7506 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source ...

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IRF7506TR International Rectifier, IRF7506TR Datasheet

IRF7506TR

Specifications of IRF7506TR

Available stocks

Related parts for IRF7506TR

IRF7506TR Summary of contents

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