MOSFET 2P-CH 30V 1.7A MICRO8

IRF7506TR

Manufacturer Part NumberIRF7506TR
DescriptionMOSFET 2P-CH 30V 1.7A MICRO8
ManufacturerInternational Rectifier
SeriesHEXFET®
IRF7506TR datasheet
 

Specifications of IRF7506TR

Fet Type2 P-Channel (Dual)Fet FeatureLogic Level Gate
Rds On (max) @ Id, Vgs270 mOhm @ 1.2A, 10VDrain To Source Voltage (vdss)30V
Current - Continuous Drain (id) @ 25° C1.7AVgs(th) (max) @ Id1V @ 250µA
Gate Charge (qg) @ Vgs11nC @ 10VInput Capacitance (ciss) @ Vds180pF @ 25V
Power - Max1.25WMounting TypeSurface Mount
Package / CaseMicro8™Lead Free Status / RoHS StatusContains lead / RoHS non-compliant
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Next
Generation V Technology
Ultra Low On-Resistance
Dual P-Channel MOSFET
Very Small SOIC Package
Low Profile (<1.1mm)
Available in Tape & Reel
Fast Switching
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low
on-resistance per silicon area.
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The new Micro8 package, with half the footprint area of the
standard SO-8, provides the smallest footprint available in
an SOIC outline. This makes the Micro8 an ideal device
for applications where printed circuit board space is at a
premium. The low profile (<1.1mm) of the Micro8 will
allow it to fit easily into extremely thin application
environments such as portable electronics and PCMCIA
cards.
Absolute Maximum Ratings
I
@ T
= 25°C
Continuous Drain Current, V
D
A
I
@ T
= 70°C
Continuous Drain Current, V
D
A
I
Pulsed Drain Current
DM
P
@T
= 25°C
Power Dissipation
D
A
Linear Derating Factor
V
Gate-to-Source Voltage
GS
dv/dt
Peak Diode Recovery dv/dt
T
T
Junction and Storage Temperature Range
J,
STG
Thermal Resistance Ratings
Parameter
R
Maximum Junction-to-Ambient
JA
All Micro8 Data Sheets reflect improved Thermal Resistance, Power and Current -Handling Ratings- effective
only for product marked with Date Code 505 or later .
S 1
G 1
S 2
G 2
This
Parameter
@ -10V
GS
@ -10V
GS
PD - 9.1268F
IRF7506
®
HEXFET
Power MOSFET
1
8
D1
V
DSS
2
7
D1
3
6
D2
4
5
D2
R
DS(on)
T o p V iew
MICRO8
Max.
-1.7
-1.4
-9.6
1.25
10
± 20
5.0
-55 to + 150
Typ.
Max.
–––
100
= -30V
= 0.27
Units
A
W
mW/°C
V
V/ns
°C
Units
°C/W
8/25/97

IRF7506TR Summary of contents

  • Page 1

    ... Very Small SOIC Package Low Profile (<1.1mm) Available in Tape & Reel Fast Switching Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs ...

  • Page 2

    IRF7506 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source ...

  • Page 3

    VGS TOP - 15V - 10V - 7.0V - 5.5V - 4.5V - 4.0V - 3.5V BOTT µ LSE W IDTH ° ...

  • Page 4

    IRF7506 1MH ...

  • Page 5

    Q G -10V Charge Fig 9a. Basic Gate Charge Waveform Current Regulator Same Type as D.U.T. 50K .2 F 12V . -3mA I G Current Sampling Resistors Fig 9b. Gate Charge ...

  • Page 6

    IRF7506 D.U. Reverse Polarity of D.U.T for P-Channel Driver Gate Drive D.U.T. I Reverse Recovery Current D.U.T. V Re-Applied Voltage Inductor Curent *** Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations ...

  • Page 7

    Package Outline Micro8 Outline Dimensions are shown in millimeters (inches ...

  • Page 8

    IRF7506 Tape & Reel Information Micro8 Dimensions are shown in millimeters (inches TLIN -48 1 & EIA- 541 . 2 . ...