IRF7506TR International Rectifier, IRF7506TR Datasheet - Page 5

• Manufacturer Part Number: IRF7506TR
• Description: MOSFET 2P-CH 30V 1.7A MICRO8
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7506TR

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 270 mOhm @ 1.2A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 1.7A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 11nC @ 10V
• Input Capacitance (ciss) @ Vds: 180pF @ 25V
• Power - Max: 1.25W
• Mounting Type: Surface Mount
• Package / Case: Micro8™
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

1000
100
0.1
10
0.00001
1
-10V
Fig 9a. Basic Gate Charge Waveform
Fig 9b. Gate Charge Test Circuit
D = 0.50
V
12V
G
V
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
0.20
0.10
0.05
0.02
0.01
GS
Same Type as D.U.T.
Q
Current Regulator
.2 F
GS
(THERMAL RESPONSE)
0.0001
50K
-3mA
Current Sampling Resistors
SINGLE PULSE
.3 F
Charge
I
Q
Q
G
GD
G
D.U.T.
I
0.001
D
+
-
V
t , Rectangular Pulse Duration (sec)
DS
1
0.01
V
10%
90%
V
GS
DS
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
0.1
R
Pulse Width
Duty Factor
G
-10V
t
d(on)
V
GS
1. Duty factor D =
2. Peak T = P
Notes:
V
DS
t
r
µs
1
J
DM
D.U.T.
x Z
t / t
1
R
thJA
P
2
D
IRF7506
DM
+ T
10
t
A
t
d(off)
1
t
2
+
-
V
t
DD
f
100