IRF7506TR International Rectifier, IRF7506TR Datasheet
IRF7506TR
Specifications of IRF7506TR
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IRF7506TR Summary of contents
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... Very Small SOIC Package Low Profile (<1.1mm) Available in Tape & Reel Fast Switching Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs ...
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IRF7506 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source ...
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VGS TOP - 15V - 10V - 7.0V - 5.5V - 4.5V - 4.0V - 3.5V BOTT µ LSE W IDTH ° ...
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IRF7506 1MH ...
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Q G -10V Charge Fig 9a. Basic Gate Charge Waveform Current Regulator Same Type as D.U.T. 50K .2 F 12V . -3mA I G Current Sampling Resistors Fig 9b. Gate Charge ...
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IRF7506 D.U. Reverse Polarity of D.U.T for P-Channel Driver Gate Drive D.U.T. I Reverse Recovery Current D.U.T. V Re-Applied Voltage Inductor Curent *** Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations ...
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Package Outline Micro8 Outline Dimensions are shown in millimeters (inches ...
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IRF7506 Tape & Reel Information Micro8 Dimensions are shown in millimeters (inches TLIN -48 1 & EIA- 541 . 2 . ...