AO4800B Alpha & Omega Semiconductor Inc, AO4800B Datasheet - Page 3

• Manufacturer Part Number: AO4800B
• Description: MOSFET DUAL N-CH 30V 6.9A 8-SOIC
• Manufacturer: Alpha & Omega Semiconductor Inc

Specifications of AO4800B

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 27 mOhm @ 6.9A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 6.9A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 12nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1100pF @ 15V
• Power - Max: 1.9W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 785-1053-2

Rev 3: Oct 2010
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40
35
30
25
20
15
10
5
0
30
25
20
15
10
50
40
30
20
10
0
0
0
10V
Figure 5: On-Resistance vs. Gate-Source Voltage
Figure 3: On-Resistance vs. Drain Current and
Fig 1: On-Region Characteristics (Note E)
1
2
5
4.5V
3V
Gate Voltage (Note E)
V
2
4
DS
V
(Volts)
V
(Note E)
GS
I
V
10
GS
D
GS
(A)
(Volts)
=10V
=4.5V
3
6
15
V
I
D
GS
2.5V
=6.9A
=2V
4
8
25° C
125° C
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20
10
5
15
12
1.8
1.6
1.4
1.2
0.8
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
9
6
3
0
1
0
Figure 4: On-Resistance vs. Junction Temperature
0
Figure 2: Transfer Characteristics (Note E)
0.0
Figure 6: Body-Diode Characteristics (Note E)
25
0.5
V
DS
125° C
0.2
50
125° C
V
I
D
=5V
GS
=6A
1
Temperature (° C)
=4.5V
V
GS
75
(Note E)
(Volts)
0.4
V
1.5
SD
(Volts)
100
0.6
25° C
2
125
V
I
D
GS
=6.9A
=10V
25° C
2.5
17
10
18
150
0.8
5
2
0
AO4800B
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3
1.0