AO4806 Alpha & Omega Semiconductor Inc, AO4806 Datasheet - Page 3

MOSFET DUAL N-CH 20V 9.4A 8-SOIC

AO4806

Manufacturer Part Number
AO4806
Description
MOSFET DUAL N-CH 20V 9.4A 8-SOIC
Manufacturer
Alpha & Omega Semiconductor Inc
Datasheet

Specifications of AO4806

Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
14 mOhm @ 9.4A, 10V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
9.4A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
17.9nC @ 4.5V
Input Capacitance (ciss) @ Vds
1810pF @ 10V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
785-1056-2

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AO4806
Manufacturer:
CIRRUS
Quantity:
12 492
Part Number:
AO4806
Manufacturer:
AO
Quantity:
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AO4806
Alpha & Omega Semiconductor, Ltd.
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40
30
20
10
40
30
20
10
0
40
30
20
10
0
0
0
0
10V
0
Figure 5: On-Resistance vs. Gate-Source Voltage
Figure 3: On-Resistance vs. Drain Current and
2.5V
Fig 1: On-Region Characteristics
1
2
5
4.5V
Gate Voltage
2
V
4
V
DS
GS
25°C
I
D
(Volts)
10
(Volts)
(A)
V
GS
=1.8V
3
6
I
V
D
V
2V
=6A
GS
GS
V
=10V
GS
=2.5V
125°C
15
V
=1.5V
GS
4
8
=4.5V
20
10
5
1.0E+01
1.0E+00
20
16
12
1.6
1.4
1.2
0.8
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
8
4
0
1
0
0
0.0
25
Figure 4: On-Resistance vs. Junction
0.5
Figure 2: Transfer Characteristics
Figure 6: Body-Diode Characteristics
0.2
125°C
50
V
GS
1
V
Temperature (°C)
=4.5V, 8A
125°C
DS
V
Temperature
GS
0.4
=5V
75
V
=2.5V,6A
GS(Volts)
1.5
V
25°C
V
SD
GS
100
0.6
=10V, 9.4A
(Volts)
25°C
2
125
0.8
V
GS
2.5
=1.8V, 4A
150
1.0
175
3
1.2

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