SI4559ADY-T1-GE3 Vishay, SI4559ADY-T1-GE3 Datasheet - Page 8

• Manufacturer Part Number: SI4559ADY-T1-GE3
• Description: MOSFET N/P-CH 60V 8-SOIC
• Manufacturer: Vishay

Specifications of SI4559ADY-T1-GE3

• Transistor Polarity: N and P-Channel
• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 58 mOhm @ 4.3A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 4.3A, 3A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 10V
• Input Capacitance (ciss) @ Vds: 665pF @ 15V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Minimum Operating Temperature: - 55 C
• Configuration: Dual
• Resistance Drain-source Rds (on): 0.058 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 4.3 A @ N Channel or 3 A @ P Channel
• Power Dissipation: 2000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 4.5A
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 46mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 1V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI4559ADY-T1-GE3TR

Si4559ADY
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
8
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
10
25
20
15
10
5
0
8
6
4
2
0
0
0
0
V
GS
V
I
D
DS
= 10 thru 5 V
1
= 3.1 A
On-Resistance vs. Drain Current
= 30 V
5
V
3
DS
Q
2
Output Characteristics
g
- Drain-to-Source Voltage (V)
I
D
- Total Gate Charge (nC)
V
GS
- Drain Current (A)
Gate Charge
3
10
6
= 4.5 V
4
15
9
5
V
GS
6
20
12
= 10 V
4 V
3 V
7
25
15
8
1000
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
800
600
400
200
25
20
15
10
- 50 - 25
0
5
0
0
0
V
I
D
C
GS
On-Resistance vs. Junction Temperature
rss
= 3.1 A
= 10 V
10
1
V
0
T
GS
J
V
Transfer Characteristics
- Junction Temperature (°C)
DS
T
25 °C
- Gate-to-Source Voltage (V)
C
25
C
20
oss
- Drain-to-Source Voltage (V)
2
= 125 °C
Capacitance
50
S09-0393-Rev. B, 09-Mar-09
30
3
75
Document Number: 73624
C
iss
- 55 °C
100
40
4
125
50
5
150
175
60
6