IRF7338PBF International Rectifier, IRF7338PBF Datasheet - Page 3

• Manufacturer Part Number: IRF7338PBF
• Description: MOSFET N+P 12V 6.3A/3A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7338PBF

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 34 mOhm @ 6A, 4.5V
• Drain To Source Voltage (vdss): 12V
• Current - Continuous Drain (id) @ 25° C: 6.3A, 3A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 8.6nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 640pF @ 9V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual Dual Drain
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 34 mOhms
• Drain-source Breakdown Voltage: 12 V
• Gate-source Breakdown Voltage: 8 V
• Continuous Drain Current: 6.3 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Fall Time: 34 ns, 25 ns
• Gate Charge Qg: 5.7 nC
• Minimum Operating Temperature: - 55 C
• Rise Time: 7.6 ns, 13 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRF7338PBF

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0.01
100
0.1
10
100
1
10
1
0.1
1.0
V DS , Drain-to-Source Voltage (V)
V GS , Gate-to-Source Voltage (V)
2.0
T J = 25°C
1
20µs PULSE WIDTH
Tj = 25°C
V DS = 10V
20µs PULSE WIDTH
1.5V
3.0
T J = 150°C
TOP
BOTTOM 1.5V
4.5V
4.0V
3.5V
3.0V
2.7V
2.0V
7.5V
VGS
10
4.0
100.0
100
0.1
10.0
10
1
1.0
0.1
0.1
TOP
BOTTOM 1.5V
0.4
4.5V
4.0V
3.5V
3.0V
2.7V
2.0V
7.5V
V DS , Drain-to-Source Voltage (V)
VGS
V SD , Source-toDrain Voltage (V)
T J = 150°C
0.6
IRF7338PbF
0.8
T J = 25°C
1
20µs PULSE WIDTH
Tj = 150°C
1.5V
1.0
V GS = 0V
1.2
3
1.4
10